MWI50-12T7T IXYS, MWI50-12T7T Datasheet - Page 2

• Manufacturer Part Number: MWI50-12T7T
• Description: MOD IGBT SIX-PACK RBSOA E2
• Manufacturer: IXYS

Specifications of MWI50-12T7T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 80
• Ic80, Tc = 80°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (k/w): 0.46
• If25, Tc = 25°c, Diode, (a): 85
• If80, Tc = 80°c, Diode, (a): 57
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
Symbol
V
I
I
V
Q
I
t
E
R
Output Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
SC
SC
Output Inverter D1 - D6
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
thJC
RRM
F
rec
thJC
G(on)
rr
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
continuous
transient
I
on chip level
I
V
V
V
V
inductive load
V
V
L
V
V
R
(per IGBT)
Conditions
I
V
di
(per diode)
I
C
C
F
F
S
CE
GE
CE
CE
CE
GE
GE
CE
R
G
F
= 60 A; V
= 50 A; V
= 2 mA; V
= 60 A; V
= 70 nH
/dt = -1200 A/µs
= 600 V
= 18 W; non-repetitive
= V
= ±20 V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= ±15 V; R
= 900 V; V
CES
; V
GE
GE
GE
GE
GE
GE
C
= 0 V
= 15 V
GE
GE
= 0 V
= V
G
G
= 0 V
= 50 A
= 0 V; f = 1 MHz
= 18 W
= 18 W
= ±15 V; I
= ±15 V;
CE
C
= 50 A
V
CEK
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
VJ
= 1150 V
= 25°C unless otherwise stated
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 25°C
= 80°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 25°C
MWI 50-12T7T
min.
min.
5
3500
1.95
1.95
Ratings
typ.
Ratings
typ.
470
520
200
350
1.7
2.0
5.8
6.5
2.5
90
50
90
60
2
5
8
max.
1200
max.
1200
2.15
0.46
±20
±30
270
400
100
6.5
2.2
0.6
80
50
10
85
57
2
20100831d
2 - 7
Unit
Unit
K/W
K/W
mA
mA
mJ
mJ
mJ
nC
µC
nA
pF
ns
ns
ns
ns
µs
ns
W
V
V
V
A
A
V
V
V
A
A
V
A
A
V
V
A