CM50BU-24H Powerex Inc, CM50BU-24H Datasheet - Page 2

• Manufacturer Part Number: CM50BU-24H
• Description: IGBT MOD H-BRDG 1200V 50A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM50BU-24H

• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.5nF @ 10V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 50A
• Circuit Configuration: H-Bridge
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015 x2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
c
c
= 25°C)
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
≤ 150°C)
c
= 25°C)
j
= 25 °C unless otherwise specified
j
V
R
R
= 25 °C unless otherwise specified
V
Symbol
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
I
C
th(j-c)
I
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(c-f)
Q
Q
j
t
oes
EC
res
t
t
ies
rr
G
r
f
= 25 °C unless otherwise specified
rr
Q
D
j
= 25 °C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
I
I
= 50A, V
= 50A, V
Load Switching Operation
E
E
= 600V, I
V
V
I
V
C
= 50A, di
= 50A, di
V
Per FWDi 1/4 Module
R
Per IGBT 1/4 Module
CE
GE
V
CC
I
CE
E
= 5.0mA, V
GE1
G
= 50A, V
= V
= V
= 6.3Ω, Resistive
= 600V, I
= 10V, V
GE
Test Conditions
Test Conditions
Test Conditions
GE
= V
GES
CES
C
j
j
E
E
) does not exceed T
) does not exceed T
= 15V, T
= 50A, V
Symbol
= 15V, T
GE2
/dt = -100A/μs
/dt = -100A/μs
V
V
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
GE
T
stg
–
–
–
iso
C
E
CE
GE
C
c
j
GE
CE
= 15V,
= 50A,
= 0V
= 10V
= 0V
= 0V
= 0V
j
j
GE
= 125°C
= 25°C
= 15V
j(max)
j(max)
rating.
rating.
CM50BU-24H
Min.
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1200
2500
100*
100*
±20
400
390
50
50
15
31
187
Typ.
Typ.
Typ.
–
–
6
2.9
2.85
–
–
–
–
–
–
–
–
–
0.28
–
–
0.1
200
150
350
300
80
Max.
Max.
Max.
1
0.5
7.5
3.7
–
–
3.2
7.5
2.6
1.5
–
0.31
0.7
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
Units
in-lb
in-lb
°C/W
°C/W
°C/W
°C
°C
Volts
Volts
Volts
Volts
mA
nC
µC
µA
ns
ns
ns
ns
ns
nf
nf
nf