CM200DU-12NFH Powerex Inc, CM200DU-12NFH Datasheet - Page 3

• Manufacturer Part Number: CM200DU-12NFH
• Description: IGBT MOD DUAL 600V 200A NFH SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DU-12NFH

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 55nF @ 10V
• Power - Max: 590W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 590W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA507
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1082; CM200DU-12NFH

CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Rev. 11/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
400
300
200
100
10
10
10
0
3
2
1
0
0
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
0.5
FORWARD CHARACTERISTICS
V
OUTPUT CHARACTERISTICS
T
T
GE
1
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
= 20V
1.0
15
13
11
(TYPICAL)
(TYPICAL)
2
1.5
7
7.5
3
9.5
8.5
8
2.0
9
10
CE
EC
T
j
, (VOLTS)
, (VOLTS)
4
2.5
= 25
o
C
3.0
5
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
-1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
GE
GE
COLLECTOR-CURRENT, I
Per 1/2 Module, Thermal Grease Applied
= 15V
= 0V
Per FWDi 1/2 Module, T C Reference
T
T
Per IGBT 1/2 Module, T C Reference
100
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
T C Reference Point Under Chips
10
Point per Outline Drawing
Point per Outline Drawing
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
200
Test Conditions
C
10
, (AMPERES)
1
300
C
C
C
CE
oes
ies
res
, (VOLTS)
400
10
2
10
10
10
5
4
3
2
1
0
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
6
1
T
Min.
3.1
j
—
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
8
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.07
Typ.
—
—
—
—
(TYPICAL)
(TYPICAL)
12
10
2
14
I
I
I
C
C
C
C
Max.
V
V
R
T
Inductive Load
0.21
0.35
0.15
, (AMPERES)
= 400A
= 200A
= 80A
31
t
t
CC
GE
j
—
t
G
GE
t
f
d(off)
16
d(on)
r
= 125°C
= 6.3Ω
, (VOLTS)
= 300V
= ±15V
18
°C/W
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3