CM75DU-24H Powerex Inc, CM75DU-24H Datasheet - Page 4

• Manufacturer Part Number: CM75DU-24H
• Description: IGBT MOD DUAL 1200V 75A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM75DU-24H

• Package / Case: Module
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 11nF @ 10V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 450W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75DU-24F
Trench Gate Design Dual IGBTMOD™
75 Amperes/1200 Volts
150
125
100
10
10
10
10
10
10
10
75
50
25
0
3
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
0
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
V
V
R
T
Inductive Load
T
T
j
CC
GE
G
j
j
= 25°C
= 25°C
= 25
= 4.2 Ω
FORWARD CHARACTERISTICS
= 600V
= ±15V
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
o
C
1
FREE-WHEEL DIODE
V
GE
(TYPICAL)
(TYPICAL)
= 20V
(TYPICAL)
15
11
2.0
10
2
1
I
8
t
rr
rr
E
, (AMPERES)
8.5
10 9.5
9
3.0
EC
3
CE
, (VOLTS)
, (VOLTS)
4.0
10
4
2
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
COLLECTOR-CURRENT, I
= 75A
200
GE
= 0V
30
= 15V
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25°C
= 125°C
400
10
0
60
V
(TYPICAL)
(TYPICAL)
CC
600
= 400V
90
G
C
800 1000
10
, (nC)
, (AMPERES)
V
CC
GE
1
CE
CE
120
= 600V
C
, (VOLTS)
C
C
oes
ies
res
1200
150
10
2
10
10
10
10
10
10
10
10
10
5
4
3
2
1
0
-1
-2
-3
3
2
1
0
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
1
-3
V
V
R
T
Inductive Load
I
Per Unit Base
R
R
Single Pulse
T
C
j
T
CC
GE
G
C
I
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 125°C
j
C
= 30A
GATE-EMITTER VOLTAGE, V
6
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 4.2 Ω
= 25°C
= 25°C
= 75A
= 600V
= ±15V
I
C
10
= 0.28°C/W (IGBT)
= 0.47°C/W (FWDi)
= 150A
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
-2
(IGBT & FWDi)
HALF-BRIDGE
10
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
12
-1
-5
2
14
C
, (AMPERES)
GE
10
10
16
, (VOLTS)
-4
0
t
t
d(off)
d(on)
18
t
t
r
f
10
10
10
20
-3
3
1
10
10
10
-1
-2
-3