CM75DU-24F Powerex Inc, CM75DU-24F Datasheet - Page 4
![IGBT MOD DUAL 1200V 75A F SER](/photos/22/15/221575/4612613_sml.jpg)
CM75DU-24F
Manufacturer Part Number
CM75DU-24F
Description
IGBT MOD DUAL 1200V 75A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet
1.CM75DU-24F.pdf
(4 pages)
Specifications of CM75DU-24F
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
29nF @ 10V
Power - Max
450W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
75A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
450W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Current Rating
75A
Distributorinventory
View
Voltage
1200V
Current
75A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B or BG2C-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM75DU-24F
Manufacturer:
MITSUBISHI
Quantity:
26
Company:
Part Number:
CM75DU-24F
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM75DU-24F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM75DU-24F
Quantity:
55
Company:
Part Number:
CM75DU-24F#300G
Manufacturer:
ITS
Quantity:
1 000
4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DU-24F
Trench Gate Design Dual IGBTMOD™
75 Amperes/1200 Volts
150
125
100
10
10
10
10
10
10
10
75
50
25
0
3
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
0
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
V
V
R
T
Inductive Load
T
T
j
CC
GE
G
j
j
= 25°C
= 25°C
= 25
= 4.2 Ω
FORWARD CHARACTERISTICS
= 600V
= ±15V
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
o
C
1
FREE-WHEEL DIODE
V
GE
(TYPICAL)
(TYPICAL)
= 20V
(TYPICAL)
15
11
2.0
10
2
1
I
8
t
rr
rr
E
, (AMPERES)
8.5
10 9.5
9
3.0
EC
3
CE
, (VOLTS)
, (VOLTS)
4.0
10
4
2
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
COLLECTOR-CURRENT, I
= 75A
200
GE
= 0V
30
= 15V
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25°C
= 125°C
400
10
0
60
V
(TYPICAL)
(TYPICAL)
CC
600
= 400V
90
G
C
800 1000
10
, (nC)
, (AMPERES)
V
CC
GE
1
CE
CE
120
= 600V
C
, (VOLTS)
C
C
oes
ies
res
1200
150
10
2
10
10
10
10
10
10
10
10
10
5
4
3
2
1
0
-1
-2
-3
3
2
1
0
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
1
-3
V
V
R
T
Inductive Load
I
Per Unit Base
R
R
Single Pulse
T
C
j
T
CC
GE
G
C
I
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 125°C
j
C
= 30A
GATE-EMITTER VOLTAGE, V
6
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 4.2 Ω
= 25°C
= 25°C
= 75A
= 600V
= ±15V
I
C
10
= 0.28°C/W (IGBT)
= 0.47°C/W (FWDi)
= 150A
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
-2
(IGBT & FWDi)
HALF-BRIDGE
10
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
12
-1
-5
2
14
C
, (AMPERES)
GE
10
10
16
, (VOLTS)
-4
0
t
t
d(off)
d(on)
18
t
t
r
f
10
10
10
20
-3
3
1
10
10
10
-1
-2
-3