MII100-12A3 IXYS, MII100-12A3 Datasheet - Page 2

• Manufacturer Part Number: MII100-12A3
• Description: IGBT 1200V 135A SOA/RBSOA
• Manufacturer: IXYS

Specifications of MII100-12A3

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 75A
• Current - Collector (ic) (max): 135A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.5nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 135
• Ic80, Tc = 80°c, Igbt, (a): 90
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 10.5
• Rthjc, Max, Igbt, (k/w): 0.22
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 95
• Rthjc, Max, Diode, (k/w): 0.45
• Package Style: Y4-M5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
V
C
C
C
t
t
t
t
E
E
R
R
Reverse Diode (FRED)
V
I
I
t
R
R
© 2000 IXYS All rights reserved
CES
GES
F
RM
d(on)
r
d(off)
f
rr
(BR)CES
GE(th)
CE(sat)
on
off
F
ies
oes
res
thJC
thJS
thJC
thJS
Conditions
V
I
V
V
I
with heatsink compound
I
I
T
T
I
T
with heatsink compound
C
C
F
F
F
C
C
J
GE
CE
CE
= 75 A, V
= 75 A, V
= 75 A, V
= 3 mA, V
= 75 A, V
= 125°C, V
= 25°C
= 80°C
= 0 V
Inductive load, T
I
V
= V
= 0 V, V
V
C
CE
CE
= 75 A, V
CES
= 600 V, R
= 25 V, V
GE
GE
GE
GE
CE
GE
R
= 0 V,
= 0 V, T
= 0 V, -di
= 15 V
= V
= ±20 V
= 600 V
GE
GE
GE
= ±15 V
G
= 0 V, f = 1 MHz
= 15 W
J
J
F
= 125°C
= 125°C
/dt = 600 A/ms
T
T
J
J
(T
(T
= 25°C
= 125°C
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
1200
min.
min.
4.5
Characteristic Values
Characteristic Values
0.75
0.33
12.1
10.5
0.44
typ.
typ.
100
650
200
7.5
2.2
5.5
2.2
1.7
0.9
50
50
62
max.
max.
±300 nA
0.22 K/W
0.45 K/W
150
6.5
2.7
2.5
1.8
95
5 mA
MII 100-12 A3
K/W
K/W
mA
mJ
mJ
nF
nF
nF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
A
Dimensions in mm (1 mm = 0.0394")
GE
MID 100-12 A3
MDI 100-12 A3
J
J
W
W
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