MUBW35-12A7 IXYS, MUBW35-12A7 Datasheet - Page 5

• Manufacturer Part Number: MUBW35-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW35-12A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 29
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 50
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 35
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.6
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1 Forward current versus voltage
Fig. 4
Fig. 6 Transient thermal impedance junction to case
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Z
Input Rectifier Bridge D11 - D16
P
I
F
thJC
tot
120
100
800
600
400
200
K/W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
W
0.001
A
0
0
0.0
0
drop per diode
Power dissipation versus direct output current and ambient temperature, sin 180°
0.5
T
T
40
VJ
VJ
1.0
= 125°C
= 25°C
0.01
1.5
80
V
F
2.0
V
I
d(AV)M
120
2.5
A
I
0.1
FSM
Fig. 2 Surge overload current
200
160
120
0
80
40
A
0.001
0
20
50Hz, 80% V
40
0.01
60
RRM
1
80 100 120 140
T
T
T
VJ
amb
VJ
0.1
= 45°C
= 125°C
t
0.05 K/W
0.15 K/W
t
R
0.3 K/W
0.5 K/W
thA
s
1 K/W
2 K/W
5 K/W
s
:
DWFN21-16
°C
1
10
Fig. 3 I
Fig. 5 Max. forward current versus
I
I
d(AV)
2
t
100
A
10
10
80
60
40
20
2
A
0
s
3
2
1
0
case temperature
2
t versus time per diode
20 40 60 80 100 120 140
T
MUBW 35-12 A7
VJ
= 45°C
2
3
T
4 5 6 7 8 9
VJ
= 125°C
T
C
t
ms
5 - 8
°C
10