CM50DU-24F Powerex Inc, CM50DU-24F Datasheet - Page 4

• Manufacturer Part Number: CM50DU-24F
• Description: IGBT MOD DUAL 1200V 50A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM50DU-24F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 320W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 50A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B or BG2C-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
100
10
10
10
10
10
10
80
60
40
20
0
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
0
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
V
V
R
T
Inductive Load
T
T
j
j
CC
GE
G
j
= 25°C
= 25°C
= 25
= 6.3 Ω
FORWARD CHARACTERISTICS
= 600V
= ±15V
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
o
C
1
FREE-WHEEL DIODE
V
GE
= 20V
(TYPICAL)
(TYPICAL)
(TYPICAL)
15
11
2.0
10
2
1
I
t
8
rr
rr
E
, (AMPERES)
8.5
10 9.5
9
3.0
3
EC
CE
, (VOLTS)
, (VOLTS)
4.0
10
4
2
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
V
GE
COLLECTOR-CURRENT, I
= 50A
GE
= 0V
20
= 15V
200
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, Q
GATE CHARGE, V
= 25°C
= 125°C
10
V
0
40
CC
(TYPICAL)
(TYPICAL)
= 400V
400
60
G
C
10
, (AMPERES)
, (nC)
GE
V
1
600
CC
CE
CE
80
C
, (VOLTS)
C
C
= 600V
oes
ies
res
100
800
10
2
10
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
3
2
1
0
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
0
-3
V
V
R
T
Inductive Load
I
Per Unit Base
R
R
Single Pulse
T
C
j
T
CC
GE
G
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
I
= 125°C
GATE-EMITTER VOLTAGE, V
j
C
= 20A
6
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 25°C
= 6.3 Ω
= 25°C
= 50A
= 600V
= ±15V
I
C
10
= 0.39°C/W (IGBT)
= 0.7°C/W (FWDi)
TRANSIENT THERMAL
= 100A
COLLECTOR-EMITTER
8
-2
(IGBT & FWDi)
HALF-BRIDGE
10
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
12
-1
-5
1
14
C
, (AMPERES)
GE
10
10
16
, (VOLTS)
-4
0
18
t
t
t
t
d(on)
r
f
d(off)
10
10
10
20
-3
2
1
10
10
10
-1
-2
-3