MUBW15-12A7 IXYS, MUBW15-12A7 Datasheet - Page 7

• Manufacturer Part Number: MUBW15-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW15-12A7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 15A
• Current - Collector (ic) (max): 35A
• Current - Collector Cutoff (max): 900µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 180W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 24
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 35
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.1
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.7
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2004 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
E
E
I
CM
on
on
mJ
40
30
20
10
mJ
A
6
4
2
0
3
2
1
0
0
0
0
0
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
R
T
t
d(on)
E
VJ
G
on
= 82 Ω
200
t
= 125°C
20
r
times versus collector current
times versus gate resistor
RBSOA
400
10
40
600
60
800 1000 1200 1400
20
80
R
I
G
100
C
V
V
R
T
V
V
I
T
C
CE
GE
VJ
G
VJ
CE
GE
V
120
= 600V
= 82Ω
= 600V
= ±15V
= ±15V
= 125°C
CE
= 15A
= 125°C
30
t
E
t
d(on)
r
on
Ω
A
140
120
80
40
0
150
ns
100
50
0
ns
V
t
t
E
E
Z
0.0001
off
thJC
off
0.001
0.01
K/W
2.0
1.5
1.0
0.5
0.0
0.1
mJ
0.00001 0.0001 0.001
mJ
10
6
4
2
0
1
0
0
Fig. 14 Typ. turn off energy and switching
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
E
off
20
times versus collector current
times versus gate resistor
10
40
single pulse
60
0.01
MUBW 15-12 A7
20
80
R
0.1
G
100
I
C
t
V
V
R
T
V
V
I
T
C
CE
GE
VJ
G
VJ
CE
GE
= 600V
= 82Ω
= ±15V
= 125°C
= 600V
= ±15V
= 15A
= 125°C
120
30
1
MUBW1512A7
E
t
t
t
t
d(off)
d(off)
diode
f
IGBT
f
off
Ω
s
A
140
10
600
400
200
0
800
600
400
200
0
ns
ns
7 - 8
t
t