MID100-12A3 IXYS, MID100-12A3 Datasheet - Page 3
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MID100-12A3
Manufacturer Part Number
MID100-12A3
Description
MOD IGBT RBSOA 1200V 135A Y4-M5
Manufacturer
IXYS
Datasheet
1.MDI100-12A3.pdf
(4 pages)
Specifications of MID100-12A3
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 75A
Current - Collector (ic) (max)
135A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
5.5nF @ 25V
Power - Max
560W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y4-M5
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
135
Ic80, Tc = 80°c, Igbt, (a)
90
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
10.5
Rthjc, Max, Igbt, (k/w)
0.22
If25, Tc = 25°c, Diode, (a)
150
If80, Tc = 80°c, Diode, (a)
95
Rthjc, Max, Diode, (k/w)
0.45
Package Style
Y4-M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MID100-12A3
Manufacturer:
IPD
Quantity:
560
© 2000 IXYS All rights reserved
I
V
I
C
C
GE
150
125
100
175
150
125
100
A
75
50
25
20
15
10
A
75
50
25
V
0
5
0
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
V
T
J
V
I
CE
J
C
= 25°C
= 25°C
CE
= 20V
0.5
= 600V
= 75A
6
100
1.0
7
200
1.5
8
2.0
9
300
V
V
CE
GE
2.5
10
Q
G
400
V
GE
3.0
11
=17V
13V
11V
9V
15V
V
V
nC
I
I
I
F
RM
C
175
150
125
100
300
250
200
150
100
120
A
A
75
50
25
50
80
40
A
0
0
0
0.0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
MII 100-12 A3
T
J
= 125°C
0.5
200
free wheeling diode
free wheeling diode
1.0
I
1
RM
t
rr
1.5
400
2.0
2
T
J
600
= 125°C
2.5
MID 100-12 A3
MDI 100-12 A3
V
V
-di/dt
CE
T
V
I
F
F
3.0
J
R
3
= 125°C
= 75A
= 600V
800
A/
T
V
J
m
GE
3.5
= 25°C
s
=17V
V
100-12
15V
13V
11V
9V
V
1000
4
300
200
100
0
ns
3 - 4
t
rr