VWI35-06P1 IXYS, VWI35-06P1 Datasheet
VWI35-06P1
Specifications of VWI35-06P1
Related parts for VWI35-06P1
VWI35-06P1 Summary of contents
Page 1
... MHz ies 300 Gon (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings ...
Page 2
... Max. allowable acceleration Symbol Conditions d Creepage distance on surface S d Strike distance in air (Pin to heatsink) A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved Maximum Ratings 35 22 Characteristic Values min. typ. max. 1.9 2.1 1.4 = 125° ...
Page 3
... IGBT IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved VWI 35-06P1 ...
Page 4
... IGBT Transient thermal resistance junction to heatsink 0.00001 0.0001 0.001 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 0.005 0.5 0.01 0 (s) VWI 35-06P1 measured using 50 thJH µm thermal grease) 1 IGBT ...
Page 5
... T VJ Dynamic parameters versus T VJ 0.00001 0.0001 0.001 0.01 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2000 T = 100° 300V nC R 1500 Q r 1000 I = 30A ...