VWI35-06P1 IXYS, VWI35-06P1 Datasheet

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VWI35-06P1

Manufacturer Part Number
VWI35-06P1
Description
MODULE IGBT 31A 600V ECO-PAC2
Manufacturer
IXYS
Datasheet

Specifications of VWI35-06P1

Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 20A
Current - Collector (ic) (max)
31A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
1.1nF @ 25V
Power - Max
100W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
ECO-PAC2
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Module
Sixpack in ECO-PAC 2
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBTs
C25
C80
CM
CES
GES
d(off)
IXYS reserves the right to change limits, test conditions and dimensions.
SC
d(on)
f
r
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
Gon
thJC
thJH
ies
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 20 A; V
= 0.5 mA; V
D-68623 Lampertheim
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= V
= 300 V; V
= 0 V; V
= 25 V; V
= ±15 V; R
CE
GE
CES
= 300 V; I
= ±15 V; R
;
GE
GE
GE
GE
= 15 V; T
GE
GE
=
G
V
= 0 V; f = 1 MHz
= V
= 47
GE
= 15 V; I
= ±15 V; R
C
G
20 V
= 10 A
= 0 V; T
CE
= 82
VJ
T
= 125°C
VJ
; T
VJ
= 25°C
C
T
= 125°C
VJ
= 20 A
VJ
VJ
G
= 125°C
= 125°C
= 25°C
= 47
(T
N 5
G 1
S 9
A 1
F 3
L 9
VJ
= 25 C, unless otherwise specified)
; T
VJ
= 125°C
www.ixys.net
R 5
min.
N 9
C 1
4.5
Characteristic Values
Maximum Ratings
1100
300
typ.
W 14
1.9
2.2
0.7
0.9
0.7
2.5
50
55
30
65
V
600
100
X 18
K 10
31
21
CES
10
20
40
max.
100
2.4
6.5
0.6 mA
1.3 K/W
K/W
mA
µs
mJ
mJ
nC
W
nA
pF
ns
ns
ns
ns
D 5
H 5
V
V
A
A
A
A 5
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
Features
• NPT IGBT's
• FRED diodes
• Industry Standard Package
Typical Applications
• AC drives
• power supplies with power factor
C25
- positive temperature coefficient of
- fast switching
- fast reverse recovery
- low forward voltage
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
correction
CES
CE(sat) typ.
saturation voltage
VWI 35-06P1
= 31 A
= 600 V
= 1.9 V
Pin arangement see outlines
1 - 5

Related parts for VWI35-06P1

VWI35-06P1 Summary of contents

Page 1

... MHz ies 300 Gon (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings ...

Page 2

... Max. allowable acceleration Symbol Conditions d Creepage distance on surface S d Strike distance in air (Pin to heatsink) A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved Maximum Ratings 35 22 Characteristic Values min. typ. max. 1.9 2.1 1.4 = 125° ...

Page 3

... IGBT IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved VWI 35-06P1 ...

Page 4

... IGBT Transient thermal resistance junction to heatsink 0.00001 0.0001 0.001 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 0.005 0.5 0.01 0 (s) VWI 35-06P1 measured using 50 thJH µm thermal grease) 1 IGBT ...

Page 5

... T VJ Dynamic parameters versus T VJ 0.00001 0.0001 0.001 0.01 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2000 T = 100° 300V nC R 1500 Q r 1000 I = 30A ...

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