MWI25-12E7 IXYS, MWI25-12E7 Datasheet - Page 3

• Manufacturer Part Number: MWI25-12E7
• Description: MOD IGBT SIXPACK RBSOA 1200V E2
• Manufacturer: IXYS

Specifications of MWI25-12E7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 52A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 225W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 52A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
© 2004 IXYS All rights reserved
V
I
C
C
GE
120
100
120
100
A
80
60
40
20
20
15
10
A
80
60
40
20
V
0
5
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5
0
0
4
T
VJ
V
CE
= 125°C
1
= 20 V
6
40
Typ. turn on gate charge
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
V
9 V
V
200
7
16
0.00001
Z
I
0.0001
C
thJC
Fig. 6
0.001
Fig. 2 Typ. output characteristics
I
Fig. 4
F
0.01
120
100
K/W
0.1
A
10
0.00001 0.0001
80
60
40
20
90
75
60
45
30
15
A
0
1
0
0
0
Typ. forward characteristics of
free wheeling diode
Typ. transient thermal impedance
1
T
VJ
1
= 125°C
2
0.001
single pulse
3
MWI 25-12 E7
0.01
V
2
GE
= 17 V
4
V
0.1
V
F
T
CE
VJ
5
t
= 25°C
3
T
VJ
1
= 125°C
6
MUBW3512E7
V
13 V
15 V
11 V
diode
IGBT
9 V
s
V
3 - 4
10
7
4