IXDN75N120 IXYS, IXDN75N120 Datasheet - Page 2

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IXDN75N120

Manufacturer Part Number
IXDN75N120
Description
IGBT 1200V 150A SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXDN75N120

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 75A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
4mA
Input Capacitance (cies) @ Vce
5.5nF @ 25V
Power - Max
660W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
150
Ic90, Tc=90°c, Igbt, (a)
95
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
10.5
Rthjc, Max, Igbt, (°c/w)
0.19
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
C
C
C
Q
t
t
t
t
E
E
R
R
© 2000 IXYS All rights reserved
d(on)
r
d(off)
f
on
off
ies
oes
res
thJC
thCK
g
Conditions
I
Package with heatsink compound
C
= 75 A, V
Inductive load, T
I
V
V
C
CE
CE
= 75 A, V
= 600 V, R
= 25 V, V
GE
= 15 V, V
GE
GE
= ±15 V,
G
= 0 V, f = 1 MHz
= 15 W
J
CE
= 125°C
= 0.5 V
(T
J
CES
= 25°C, unless otherwise specified)
min.
Characteristic Values
5500
typ.
12.1
10.5
750
330
360
100
650
0.1
50
50
max.
0.19 K/W
K/W
mJ
mJ
nC
pF
pF
pF
ns
ns
ns
ns
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
Millimeter
IXDN 75N120
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Inches
1.255
0.595
1.193
1.505
0.481
0.506
1.001
1.059
0.987
0.004
21.08
0.323
0.169
0.169
0.169
0.378
0.033
0.084
0.235
0.174
0.191
0.180
Max.
2 - 4

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