MKI50-06A7 IXYS, MKI50-06A7 Datasheet - Page 4

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MKI50-06A7

Manufacturer Part Number
MKI50-06A7
Description
MOD IGBT H-BRIDGE 600V 72A E2
Manufacturer
IXYS
Datasheet

Specifications of MKI50-06A7

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
72A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
2.8nF @ 25V
Power - Max
225W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
72
Ic80, Tc = 80°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.9
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1.7
Rthjc, Max, Igbt, (k/w)
0.55
If25, Tc = 25°c, Diode, (a)
72
If80, Tc = 80°c, Diode, (a)
45
Rthjc, Max, Diode, (k/w)
1.19
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MKI50-06A7T
Manufacturer:
EUPEC
Quantity:
530
© 2011 IXYS All rights reserved
E
E
I
CM
on
on
10.0
120
7.5
5.0
2.5
0.0
mJ
mJ
90
60
30
A
4
3
2
1
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
E
on
R
T
VJ
G
= 22 Ω
100
= 125°C
10
times versus collector current
times versus gate resistor
RBSOA
200
40
20
300
30
400
R
80
40
I
G
C
500
V
V
I
T
V
V
R
T
C
VJ
VJ
CE
GE
CE
GE
G
V
= 300V
= ±15V
= 22Ω
= 50A
= 300V
= ±15V
= 125°C
50
= 125°C
A
CE
600
t
t
E
t
d(on)
r
t
d(on)
r
on
Ω
120
700
60
100
75
50
25
0
80
60
40
20
ns
ns
V
t
t
E
Z
E
0.0001
off
thJC
off
0.001
0.01
K/W
mJ
mJ
0.1
0.00001 0.0001 0.001
10
4
3
2
1
0
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
10
times versus collector current
times versus gate resistor
40
20
single pulse
0.01
30
MKI 50-06 A7
MKI 50-06 A7T
R
80
0.1
40
G
I
C
t
V
V
R
T
V
V
I
T
C
CE
GE
VJ
G
VJ
CE
GE
= 22Ω
= 300V
= ±15V
= 125°C
= 300V
= ±15V
A
= 50A
50
= 125°C
1
t
t
t
f
E
E
d(off)
t
MWI5006A7
d(off)
f
off
off
diode
IGBT
Ω
s
120
60
10
400
300
200
100
0
20110119a
600
400
200
0
ns
ns
4 - 4
t
t

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