MUBW15-06A7 IXYS, MUBW15-06A7 Datasheet - Page 8

• Manufacturer Part Number: MUBW15-06A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW15-06A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.8nF @ 25V
• Power - Max: 100W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 18
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.47
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 25
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 18
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.3
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.5
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2001 IXYS All rights reserved
Brake Chopper T7 / D7
E
Z
I
0.0001
off
C
thJC
0.001
0.01
K/W
0.1
0.00001 0.0001 0.001
30
25
20
15
10
mJ
10
A
5
0
4
3
2
1
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
VJ
CE
GE
G
= 82
= 300V
= ±15V
= 125°C
1
single pulse
T
times versus collector current
J
= 125°C
2
10
0.01
3
T
J
= 25°C
V
0.1
CE
4
I
C
t
20
V
GE
E
5
d(off)
f
1
off
= 15V
A
diode
IGBT
V
s
6
10
400
300
200
100
0
ns
t
R
E
10000
off
I
F
1000
100
1.5
mJ
1.0
0.5
0.0
30
25
20
15
10
A
5
0
0
0
0
Fig. 20 Typ. forward characteristics of
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance versus
Temperature Sensor NTC
V
V
I
T
C
VJ
CE
GE
= 300V
= ±15V
= 10A
= 125°C
25
free wheeling diode
times versus gate resistor
temperature
1
40
50
T
J
= 125°C
75
2
MUBW 15-06 A7
80
V
100
F
T
3
R
G
125
T
120
J
= 25°C
MUBW1506A7
V
E
f
d(off)
off
°C
150
4
600
400
200
0
ns
8 - 8
t