MWI30-06A7T IXYS, MWI30-06A7T Datasheet
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MWI30-06A7T
Specifications of MWI30-06A7T
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MWI30-06A7T Summary of contents
Page 1
... 300 d(off Ω = ± off MHz ies 300V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 600 ± 125° ≤ CEK CES = 33 Ω 125° 140 ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 36 24 Characteristic Values min. typ. = 25°C 2 125°C 1 125° ...
Page 3
... 0.0 0.5 1.0 1 Fig. 4 Typ. forward characteristics of free wheeling diode 200 400 600 800 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 11V 125° 25°C J 2.0 V 2.5 150 120 125°C = 300V 30 = 15A MWI3006A7 0 1000 A/μs 20070912a ...
Page 4
... Fig.10 Typ. turn off energy and switching times versus gate resistor 10 1 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 400 E off ns 300 t t d(off) 200 100 400 t d(off) ns 300 t 200 100 Ω diode IGBT MWI3006A7 20070912a ...