VWI20-06P1 IXYS, VWI20-06P1 Datasheet
VWI20-06P1
Specifications of VWI20-06P1
Related parts for VWI20-06P1
VWI20-06P1 Summary of contents
Page 1
... MHz ies 300 Gon (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings 600 ± ...
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... Max. allowable acceleration Symbol Conditions d Creepage distance on surface S d Strike distance in air (Pin to heatsink) A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 21 14 Characteristic Values min. typ. max. 1.9 2.1 1.4 = 125° ...
Page 3
... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved VWI 20-06P1 20110119a ...
Page 4
... IGBT IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved VWI 20-06P1 20110119a ...
Page 5
... IGBT Transient thermal resistance junction to heatsink 0.00001 0.0001 0.001 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.005 0.5 0.01 0 (s) VWI 20-06P1 measured using 50 µm thJH thermal grease) 1 IGBT ...
Page 6
... 120 °C 160 T VJ Dynamic parameters versus T VJ 0.00001 0.0001 0.001 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1 100° 300V R 1.2 1 20A 10A 0 0.6 ...