VKI50-06P1 IXYS, VKI50-06P1 Datasheet

MOD IGBT H-BRIDGE 600V ECO-PAC2

VKI50-06P1

Manufacturer Part Number
VKI50-06P1
Description
MOD IGBT H-BRIDGE 600V ECO-PAC2
Manufacturer
IXYS
Datasheet

Specifications of VKI50-06P1

Configuration
Full Bridge Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 50A
Current - Collector (ic) (max)
42.5A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
16nF @ 25V
Power - Max
130W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
ECO-PAC2
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 50 A; V
= 0.7 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= ±15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= 15/0 V; R
; V
;
GE
GE
GE
GE
GE
= 15 V; T
=
G
V
= ±15 V; R
= 0 V; f = 1 MHz
GE
= 33
= V
C
20 V
= 30 A
G
= 0 V; T
in ECO-PAC 2
VJ
CE
= 33
T
= 125°C
; T
VJ
VJ
= 25°C
= 125°C
VJ
G
T
= 33
= 125°C
VJ
VJ
(T
= 25°C
= 125°C
VJ
= 25 C, unless otherwise specified)
; T
VJ
NTC
= 125°C
P18
N 9
min.
4.5
Characteristic Values
S18
F10
D 4
O 7
A 1
A 4
L 9
Maximum Ratings
1.92
270
typ.
2.4
2.9
1.4
1.0
50
50
40
16
± 20
42.5
V
600
130
CES
29
60
10
max.
0.96 K/W
100
2.9
6.5
0.6 mA
1.7 mA
H13
K10
K13
X18
T16
K/W
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
C25
easy parallelling
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
CES
CE(sat) typ.
= 42.5 A
= 600 V
= 2.4 V
VKI 50-06P1
Pin arangement see outlines
1 - 4
B3

Related parts for VKI50-06P1

VKI50-06P1 Summary of contents

Page 1

... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved F10 A 1 P18 A 4 NTC S18 Maximum Ratings 600 ± 20 42.5 29 ...

Page 2

... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Maximum Ratings 30 19 Characteristic Values min. ...

Page 3

... 125° 25° Fig. 3 Typ. transfer characteristics 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved I C 11V 9V 25T60 25T60 25T60 120 nC 160 Q G VKI 50-06P1 125°C ...

Page 4

... R Fig. 9 Typ. turn on energy and switching 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved off d(on 1,0 40 0,5 20 25T60 0 ...

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