IXSN80N60AU1 IXYS, IXSN80N60AU1 Datasheet - Page 3

• Manufacturer Part Number: IXSN80N60AU1
• Description: IGBT 100A 600V SOT-227B
• Manufacturer: IXYS

Specifications of IXSN80N60AU1

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 80A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 8.5nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
160
140
120
100
160
140
120
100
10
80
60
40
20
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
0
8
4
Fig.1 Saturation Characteristics
Fig.3 Collector-Emitter Voltage
Fig.5 Input Admittance
T
V
J
CE
= 25°C
5
= 10V
9
vs. Gate-Emitter Voltage
1
6
I
C
= 40A
10
T
J
7
= 125°C
T
V
V
V
2
J
11
I
V
CE
GE
GE
C
= 25°C
8
GE
= 80A
- Volts
- Volts
- Volts
= 15V
12
9
3
I
C
10
= 160A
T
13
J
13V
= - 40°C
11
T
4
J
= 25°C
14
12
11V
9V
7V
15
13
5
400
360
320
280
240
200
160
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
0
-50
-50
Fig.2 Output Characterstics
Fig.4 Temperature Dependence
0
Fig.6 Temperature Dependence of
T
V
J
GE
=25
2
-25
-25
= 15V
O
of Output Saturation Voltage
C
Breakdown and Threshold Voltage
4
0
0
6
IXSN80N60AU1
T
T
25
25
J
J
V
8
- Degrees C
- Degrees C
CE
10 12 14 16 18 20
50
50
- Volts
I
C
I
I
C
C
= 160A
= 40A
= 80A
75
75
V
I
BV
I
C
C
GE(th)
100 125 150
= 8mA
100 125 150
= 3mA
CES
V
11V
13V
9V
7V
GE
= 15V
3 - 4