MUBW10-06A6K IXYS, MUBW10-06A6K Datasheet - Page 2
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MUBW10-06A6K
Manufacturer Part Number
MUBW10-06A6K
Description
MODULE IGBT CBI E1
Manufacturer
IXYS
Datasheet
1.MUBW10-06A6K.pdf
(5 pages)
Specifications of MUBW10-06A6K
Configuration
Three Phase Inverter with Brake
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 10A
Current - Collector (ic) (max)
11A
Current - Collector Cutoff (max)
65µA
Input Capacitance (cies) @ Vce
0.22nF @ 25V
Power - Max
50W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E1
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
61
Rthjc, Typ, Rect 1/3 Ph., (k/w)
2.1
Vces, Inv 3 - Ph., (v)
600
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
11
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
8
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2.75
Rthjc, Typ, Inv 3 - Ph., (k/w)
2.75
Vces, Br Chopper, (v)
600
Ic80, Tc = 80°c, Br Chopper, (a)
8
Rthjc, Typ, Br Chopper, (k/w)
2.75
Package Style
E1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUBW10-06A6K
Manufacturer:
IXYS
Quantity:
492
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
I
t
(SCSOA)
R
R
Symbol
V
I
I
V
I
t
E
R
R
Ouput Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
CM
SC
Output Inverter D1 - D6
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
thJC
thCH
RRM
F
rec(off)
G(on)
thJC
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
RBSOA; V
L = 100 µH; clamped induct. load T
V
V
R
(per IGBT)
(per IGBT)
Conditions
I
V
di
(per diode)
(per diode)
I
C
C
F
F
CE
CE
CE
CE
CE
GE
CEmax
CE
G
R
F
= 10 A; V
= 0.2 mA; V
= 10 A; V
= 12 A; V
/dt = -100 A/µs
= 100 V
= 54 W; non-repetitive
= V
= 0 V; V
= 25 V; V
= 300 V; V
= 300 V; I
= ±15 V; R
= 600 V; V
= V
CES
CES
; V
GE
GE
GE
GE
GE
GE
GE
= ±15 V; R
- L
C
= 0 V
= 15 V
GE
GE
GE
= 0 V
G
= ±20 V
= 0 V
= 6 A
= 0 V; f = 1 MHz
S
= 54 W
= V
= 15 V; I
·di/dt
= ±15 V;
CE
G
C
= 54 W
T
= 6 A
VJ
= 25°C to 150°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
= 25°C unless otherwise stated
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 150°C
= 25°C
= 80°C
= 25°C
= 125°C
= 100°C
= 125°C
MUBW10-06A6K
min.
min.
4.5
0.22
0.26
0.95
0.85
Ratings
typ.
Ratings
typ.
220
110
2.7
3.1
1.0
tbd
32
20
10
30
18
10
80
max.
max.
2.75
±20
±30
600
120
600
3.3
6.5
2.5
2.2
1.6
4.4
11
50
65
21
14
8
20090929b
2 - 5
Unit
Unit
K/W
K/W
K/W
K/W
mA
mJ
mJ
nC
µA
nA
pF
ns
ns
ns
ns
µs
ns
µJ
W
V
V
V
A
A
V
V
V
A
V
A
A
V
V
A