IXGN320N60A3 IXYS, IXGN320N60A3 Datasheet

IGBT 600V SOT-227B

IXGN320N60A3

Manufacturer Part Number
IXGN320N60A3
Description
IGBT 600V SOT-227B
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGN320N60A3

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.25V @ 15V, 100A
Current - Collector (ic) (max)
320A
Current - Collector Cutoff (max)
150µA
Input Capacitance (cies) @ Vce
18nF @ 25V
Power - Max
735W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
320A
Gate To Emitter Voltage (max)
±20V
Package Type
SOT-227B
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
320
Ic110, Tc=110°c, Igbt, (a)
170
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.25
Rthjc, Max, Igbt, (°c/w)
0.17
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGN320N60A3
Manufacturer:
IXYS
Quantity:
560
GenX3
Ultra-Low-Vsat PT IGBT for
up to 5kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque (M4)
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
I
I
V
V
I
I
Test Conditions
T
T
Test Conditions
ISOL
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
600V IGBT
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
≤ 1mA
= 1mA, V
= 4mA, V
= V
= 0V, V
= 100A, V
= 320A
CES
, V
VJ
GE
GE
CE
= 125°C, R
GE
= ±20V
GE
= 0V
= V
= 0V
= 15V, Note 1
GE
t = 1min
t = 1s
GE
= 1MΩ
G
= 1Ω
T
J
= 125°C
IXGN320N60A3
-55 ... +150
-55 ... +150
@0.8 • V
600
3.0
Characteristic Values
Min.
Maximum Ratings
I
CM
1.3/11.5
1.5/13
= 320
1200
2500
3000
600
600
±20
±30
320
170
735
150
200
CES
30
1.46
1.05
Typ.
E
±400 nA
Nm/lb.in.
Nm/lb.in.
1.25
150 μA
1.5 mA
Max.
5.0
V~
V~
°C
°C
°C
W
g
V
V
V
V
V
A
A
A
A
A
V
V
V
V
I
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C25
as Main or Kelvin Emitter
Either Emitter Terminal Can Be Used
Optimized for Low Conduction Losses
High Avalanche Capability
Isolation Voltage 3000
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
E153432
≤ ≤ ≤ ≤ ≤ 1.25V
= 600V
= 320A
G
E
C
DS99576C(12/09)
V~
E

Related parts for IXGN320N60A3

IXGN320N60A3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat 320A C © 2009 IXYS CORPORATION, All Rights Reserved IXGN320N60A3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 320 170 200 1200 = 1Ω 320 G CM @0.8 • V CES 735 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1 ...

Page 2

... CES 195 63 68 290 740 62 77 330 1540 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN320N60A3 SOT-227B miniBLOC (IXGN) Max screws (4x) supplied 0.17 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... CE(sat 160A 80A C 75 100 125 150 25ºC - 40ºC 5.5 6.0 6.5 7.0 IXGN320N60A3 Fig. 2. Output Characteristics @ 0.0 0.2 0.4 0.6 0 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.2 2.8 2 320A C 160A 2.0 80A 1.6 1 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100,000 10,000 1,000 100 0 400 500 600 1.000 0.100 0.010 0.001 0.00001 400 450 500 550 600 IXGN320N60A3 Fig. 8. Capacitance MHz C ies C oes C res Volts CE Fig. 10. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 ...

Page 5

... IXGN320N60A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current R = 1Ω 15V 400V 125º 25ºC J 100 120 140 160 180 ...

Related keywords