IXGN82N120C3H1 IXYS, IXGN82N120C3H1 Datasheet - Page 2

• Manufacturer Part Number: IXGN82N120C3H1
• Description: IGBT 1200V 58A GENX3 SOT-227B
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGN82N120C3H1

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 82A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 50µA
• Input Capacitance (cies) @ Vce: 7.9nF @ 25V
• Power - Max: 595W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 130
• Ic110, Tc=110°c, Igbt, (a): 58
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.9
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 42
• Rthjc, Max, Diode, (ºc/w): 0.42
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
on
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g(on)
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher V
I
F
I
V
I
Inductive load, T
I
V
Note 3
Inductive load, T
I
V
Note 3
I
-di
Test Conditions
Test Conditions
F
C
C
C
C
= 60A, V
CE
CE
CE
= 60A, V
F
/dt = 200A/μs, V
= 60A, V
= 82A, V
= 82A, V
= 25V, V
= 0.5 • V
= 0.5 • V
= 82A, V
ADVANCE TECHNICAL INFORMATION
GE
GE
= 0V, Note 1
CE
GE
GE
GE
CES
CES
GE
= 0V,
= 10V, Note 2
= 15V, V
= 15V
= 0V, f = 1 MHz
= 15V
, R
, R
4,835,592
4,881,106
J
J
G
G
= 25°C
= 125°C
R
= 2Ω
= 2Ω
= 300V
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
T
T
J
J
= 150°C
= 100°C
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
38
6,162,665
6,259,123 B1
6,306,728 B1
7900
Typ.
Typ.
0.05
140
685
197
340
145
194
100
230
270
8.3
1.4
5.0
2.5
4.0
6.8
62
30
77
32
80
CE
55
(Clamp), T
0.21 °C/W
Max.
Max.
0.42 °C/W
5.0
6,404,065 B1
6,534,343
6,583,505
2.5
1.8
J
°C/W
or R
mJ
nC
nC
nC
mJ
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B miniBLOC (IXGN)
IXGN82N120C3H1
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2