IXGN200N60A IXYS, IXGN200N60A Datasheet - Page 4

• Manufacturer Part Number: IXGN200N60A
• Description: IGBT 300A 600V SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN200N60A

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 9nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
200
180
160
140
120
100
80
60
40
20
30
25
20
15
10
15
12
0
5
0
9
6
3
0
50
0
0
T
J
R
V
V
50
= -40ºC
V
I
I
GE
CE
G
125ºC
Fig. 9. Dependence of E
C
G
50
Fig. 7. Transconductance
CE
25ºC
= 100A
= 2.4 Ω
75
= 10mA
= 480V
= 15V
100 150 200 250 300 350 400 450 500
= 300V
Fig. 11. Gate Charge
100
Q
100
G
I
T
I
C
J
- nanoCoulombs
C
- Amperes
150
= 125ºC
- Amperes
125
200
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
150
T
250
off
J
= 25ºC
on I
175
300
c
350
200
100000
10000
1000
100
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
25
0
0
R
V
V
T
V
V
35
Fig. 8. Dependence of E
GE
CE
G
J
GE
CE
f = 1 MHz
Fig. 10. Dependence of E
5
= 125ºC
= 2.4 Ω
= 480V
= 15V
= 480V
= 15V
45
Fig. 12. Capacitance
5
T
10
J
55
- Degrees Centigrade
Tem perature
R
15
10
65
V
G
C E
- Ohms
75
20
- Volts
IXGN 200N60A2
15
85
I
I
25
I
C
C
I
C
C
I
I
= 100A
C
C
= 200A
= 200A
= 50A
off
95
= 50A
6,534,343
= 100A
on R
off
30
C
C
C
105 115 125
20
on
ies
oes
res
G
35
25
40