CPV362M4F Vishay, CPV362M4F Datasheet - Page 4

• Manufacturer Part Number: CPV362M4F
• Description: IGBT SIP MODULE 600V 8.8A IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.66V @ 15V, 8.8A
• Current - Collector (ic) (max): 8.8A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.34nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV362M4F; VS-CPV362M4F; VS-CPV362M4F; VSCPV362M4F; VSCPV362M4F

CPV362M4F
Fig. 4 - Maximum Collector Current vs. Case
0.01
0 .1
10
10
0.000 01
8
6
4
2
0
1
25
D = 0.50
0.02
0.01
0.20
0.10
0.05
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
(T H ERMA L RES PO NSE)
SINGLE PULSE
Temperature
0.00 01
75
100
C)
t , R e ct an g ula r P u ls e D ur at io n (s e c)
0 .00 1
°
1
125
150
0.01
Fig. 5 - Typical Collector-to-Emitter Voltage
2.5
2.0
1.5
1.0
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes :
1. Du ty fact or D = t
2. P e ak T = P
T , Junction Temperature ( C)
0.1
J
0
J
20
D M
40
x Z
1
60
/ t
th JC
2
P
1
D M
80 100 120 140 160
+ T
I =
I =
I =
C
C
C
C
t
1
t
9.6
4.8
2.4
2
°
A
A
A
10