CPV362M4K Vishay, CPV362M4K Datasheet - Page 5

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

Fig. 9 - Typical Switching Losses vs. Gate
1.0
0.8
0.6
0.4
0.2
0.0
800
600
400
200
0
0
1
V
V
T
I
J
C
CC
GE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
= 25
= 480V
= 15V
= 6.0A
V
R
10
CE
G
R
G
°
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
, Gate Resistance (Ohm)
C
, Gate Resistance (
GE
ies
res
oes
C ies
C res
C oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
0.01
0.1
1
Fig. 10 - Typical Switching Losses vs.
16
12
-60 -40 -20
8
4
0
0
R
V
V
Fig. 8 - Typical Gate Charge vs.
V
GE
CC
G
I
CC
C
= 15V
= 480V
= 51Ohm
Gate-to-Emitter Voltage
= 400V
= 3A
Junction Temperature
51
10
T , Junction Temperature ( C )
J
Q , Total Gate Charge (nC)
G
10
0
CPV362M4K
20
40
20
60
80 100 120 140 160
30
I =
I =
I =
C
C
C
°
1.5
6
3
A
A
A
40