CPV362M4K Vishay, CPV362M4K Datasheet - Page 4

IGBT SIP MODULE 600V 31 IMS-2

CPV362M4K

Manufacturer Part Number
CPV362M4K
Description
IGBT SIP MODULE 600V 31 IMS-2
Manufacturer
Vishay
Datasheets

Specifications of CPV362M4K

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.93V @ 15V, 3A
Current - Collector (ic) (max)
5.7A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
0.45nF @ 30V
Power - Max
23W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Transistor Polarity
N Channel
Dc Collector Current
5.7A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
23W
Collector Emitter Voltage V(br)ceo
600V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*CPV362M4K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPV362M4K
Manufacturer:
IR
Quantity:
26
CPV362M4FPbF
Vishay High Power Products
www.vishay.com
4
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
1
0
V
I
C
V
CC
0.01
= 4.8 A
CE
0.1
10
= 400 V
0.00001
Q
1
Fig. 7 - Typical Capacitance vs.
- Collector to Emitter Voltage (V)
G
Collector to Emitter Voltage
6
- Total Gate Charge (nC)
C
C
res
12
oes
(thermal response)
C
V
C
C
C
10
GE
ies
res
oes
ies
Single pulse
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
0.0001
= C
= 0 V, f = 1 MHz
= C
= C
For technical questions, contact: ind-modules@vishay.com
18
ge
gc
ce
+ C
+ C
ce
gc
24
shorted
0.001
t
IGBT SIP Module
1
100
30
- Rectangular Pulse Duration (s)
(Fast IGBT)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
Fig. 9 - Typical Switching Losses vs. Gate Resistance
- 60
10
0.1
R
V
V
V
V
T
I
G
CC
C
GE
CC
GE
J
- 40 - 20 0
Fig. 10 - Typical Switching Losses vs.
= 25 °C
= 50 Ω
= 4.8 A
Notes:
1. Duty factor D = t
2. Peak T
= 15 V
= 480 V
= 480 V
= 15 V
T
J
- Junction Temperature (°C)
R
20
G
Junction Temperature
J
- Gate Resistance (Ω)
= P
20
DM
P
DM
1
40
x Z
1
/t
30
t
1
thJC
2
60
t
2
Document Number: 94361
+ T
80 100 120 140 160
I
C
C
I
C
= 4.8 A
Revision: 01-Sep-08
= 9.6 A
I
C
40
= 2.4 A
10
50

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