CM600DU-24NF Powerex Inc, CM600DU-24NF Datasheet - Page 2

• Manufacturer Part Number: CM600DU-24NF
• Description: IGBT MOD DUAL 1200V 600A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM600DU-24NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.65V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 140nF @ 10V
• Power - Max: 2080W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Distributorinventory: View
• Voltage: 1200V
• Current: 600A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 835-1022

2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600DU-24NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Gate Emitter Terminal Torque, M4 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T
C´
measured point is just under the chips. If this value is used, R
C
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C´
= 109°C)
C
= 25°C, T
j
= 25 °C unless otherwise specified
j
j
≤ 150°C)
= 25 °C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
GES
CES
Q
j
Q
t
oes
EC
t
ies
res
t
= 25 °C unless otherwise specified
rr
r
f
G
rr
th(f-a)
V
I
I
C
CC
V
C
GE1
= 600A, V
= 600A, V
should be measured just under the chips.
= 600V, I
V
V
V
I
C
V
I
CC
Switching Operation,
CE
GE
= V
E
CE
= 60mA, V
= 600A, V
Inductive Load
Test Conditions
Test Conditions
= 600V, I
GE2
= V
= V
j
) does not exceed T
= 10V, V
I
GE
E
GE
C
CES
GES
= 600A
= 15V, R
= 600A, V
= 15V, T
= 15V, T
, V
, V
CE
C
GE
GE
GE
CE
= 600A,
= 10V
= 0V
= 0V
G
= 0V
= 0V
j
j
GE
= 125°C
= 1.0Ω,
= 25°C
Symbol
V
V
V
T
I
j(max)
I
= 15V
GES
P
CES
CM
EM
I
—
—
—
T
I
ISO
stg
–
C
E
C
j
rating.
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM600DU-24NF
–40 to 150
–40 to 125
1200*
1200*
1200
2080
1200
2500
±20
600
600
95
40
15
4000
1.95
2.15
Typ.
Typ.
7.0
28
—
—
—
—
—
—
—
—
—
—
—
Max.
2.65
3.35
Max.
140
800
180
900
350
300
1.0
0.5
8.0
—
—
—
12
2.7
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf