123NQ080 Vishay, 123NQ080 Datasheet - Page 3

• Manufacturer Part Number: 123NQ080
• Description: DIODE SCHOTTKY 80V 120A HALF-PAK
• Manufacturer: Vishay

Specifications of 123NQ080

• Voltage - Forward (vf) (max) @ If: 910mV @ 120A
• Current - Reverse Leakage @ Vr: 3mA @ 80V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 80V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: *123NQ080; VS-123NQ080; VS-123NQ080; VS123NQ080; VS123NQ080

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1 0 0 0
1 0 0
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1 0
1
0
.0 0 1
.2
.0 1
.0 0 0 0 1
.1
1
F o rw a rd V o lta g e D ro p - V
D = 0 .5 0
D = 0 .3 3
D = 0 .2 5
D = 0 .1 7
D = 0 .0 8
.4
Fig. 4 - Maximum Thermal Impedance Z
(T h e rm a l R e s is ta n c e )
.0 0 0 1
.6
S in g le P u ls e
.8
T = 1 7 5 ° C
T = 1 2 5 ° C
T = 2 5 ° C
J
J
J
.0 0 1
t , R e c ta n g u la r P u ls e D u ra tio n (S e c o n d s )
1
F M
1
(V )
1 .2
.0 1
1 .4
.1
thJC
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z
1 0 0 0 0
Characteristics
1 0 0 0
1 0 0 0
.0 0 1
1 0 0
1 0 0
.0 1
1 0
.1
P
1
D M
Fig. 2 - Typical Values of Reverse Current
0
0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 01 0 01 1 0
1
J
Fig. 3 - Typical Junction Capacitance
t
T = 1 7 5 ° C
1
J
t
Bulletin PD-2.250 rev. C 05/02
2
D M
2 0
1 5 0 ° C
1 2 5 ° C
1 0 0 ° C
R e v e rs e V o lta g e - V (V )
R e v e rs e V o lta g e - V (V )
7 5 ° C
5 0 ° C
2 5 ° C
Vs. Reverse Voltage
Vs. Reverse Voltage
1
1 0
th J C C
123NQ...(R) Series
2
4 0
T = 2 5 ° C
+ T
J
1 0 0
6 0
R
R
8 0
1 0 0
3