DSEI2X101-12A IXYS, DSEI2X101-12A Datasheet - Page 2

• Manufacturer Part Number: DSEI2X101-12A
• Description: DIODE 1200V SOT-227
• Manufacturer: IXYS

Specifications of DSEI2X101-12A

• Voltage - Forward (vf) (max) @ If: 1.87V @ 100A
• Current - Reverse Leakage @ Vr: 3mA @ 1200V
• Current - Average Rectified (io) (per Diode): 91A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: Fast Recovery Rectifier
• Configuration: Dual Parallel
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.87 V at 100 A
• Recovery Time: 60 ns
• Forward Continuous Current: 91 A
• Max Surge Current: 1300 A
• Reverse Current Ir: 3000 uA
• Power Dissipation: 250 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Vrrm, (v): 1200
• Ifavm, D = 0.5, Total, (a): 182
• Ifavm, D = 0.5, Per Diode, (a): 92
• @ Tc, (°c): 50
• Ifrms, (a): 130
• Ifsm, 10 Ms, Tvj=45°c, (a): 1200
• Vf, Max, Tvj =150°c, (v): 1.61
• @ If, (a): 100
• Trr, Typ, Tvj =25°c, (ns): 40
• Irm , Typ, Tvj =100°c, (a): 24
• @ -di/dt, (a/µs): 200
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.50
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1298691

© 2000 IXYS All rights reserved
Fig. 1 Forward current I
Fig. 4 Dynamic parameters Q
Fig. 7 Transient thermal impedance junction to case at various duty cycles
Z
I
F
K
thJC
K/W
150
125
100
0.05
f
1.4
1.2
1.0
0.8
0.6
0.4
0.1
A
75
50
25
0.001
0
1
0.0
0
D=0.7
0.3
0.2
0.1
versus T
0.5
0.05
I
Single Pulse
RM
0.5
40
T
T
T
Q
VJ
VJ
VJ
VJ
r
=150°C
=100°C
= 25°C
1.0
80
0.01
F
T
versus V
VJ
V
120
1.5
F
r
V
, I
°C
RM
F
160
2.0
0.1
t
rr
Q
Fig. 2 Reverse recovery charge Q
Fig. 5 Recovery time t
r
500
450
400
350
300
250
200
ns
16
14
12
10
C
8
6
4
2
0
100
0
T
V
VJ
R
versus -di
= 100°C
= 600V
200
I
I
I
F
F
F
400
=200A
=100A
= 50A
1
F
/dt
s
-di
600
F
rr
-di
/dt
T
V
versus -di
t
F
VJ
R
I
I
I
/dt
F
F
F
= 100°C
= 600V
=200A
=100A
= 50A
A/
800
A/
DSEI 2x101-12
m
m
s
s
1000
1000
10
F
r
/dt
I
V
RM
FR
140
120
100
Fig. 3 Peak reverse current I
Constants for Z
Fig. 6 Peak forward voltage V
80
60
40
20
60
50
40
30
20
10
V
A
0
0
1
2
3
4
5
i
0
0
T
V
I
I
I
VJ
R
F
F
F
t
DSEI 2x 101, 1200V
=200A
=100A
= 50A
versus -di
fr
= 100°C
=600V
versus di
200
200
R
0.02
0.05
0.076
0.24
0.114
thi
400
400
thJC
(K/W)
F
T
I
/dt
F
F
/dt
VJ
calculation:
= 100°C
= 100A
600
600
di
-di
F
V
/dt
F
/dt
FR
A/
800
800
t
0.00002
0.00081
0.01
0.94
0.45
i
m
(s)
s
RM
FR
1000
1000
A/
and t
m
1.5
1.0
0.5
0.0
s
2 - 2
s
t
fr
fr