DSS2X111-008A IXYS, DSS2X111-008A Datasheet - Page 2

• Manufacturer Part Number: DSS2X111-008A
• Description: DIODE SCHOTTKY 80V 110A SOT-227B
• Manufacturer: IXYS

Specifications of DSS2X111-008A

• Voltage - Forward (vf) (max) @ If: 840mV @ 100A
• Current - Reverse Leakage @ Vr: 8mA @ 80V
• Current - Average Rectified (io) (per Diode): 110A
• Voltage - Dc Reverse (vr) (max): 80V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vrrm, (v): 80
• Ifavm, D = 0.5, Total, (a): 220
• Ifavm, D = 0.5, Per Diode, (a): 110
• @ Tc, (°c): 105
• Vf, Max, Tvj =125°c, (v): 0.72
• @ If, (a): 100
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.40
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, Conditions and dimensions.
© 2003 IXYS All rights reserved
Z
I
F
I
thJC
0.01
F(AV)
K/W
100
200
160
120
0.1
10
80
40
A
A
0.001
1
0
1
0.0
0
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Fig. 3 Average forward current I
Fig. 1 Maximum forward voltage
D = 0.5
0.08
0.25
0.33
0.17
0.2
drop characteristics
40
Single Pulse
versus case temperature T
0.4
d = 0.5
80
0.01
0.6
T
150°C
125°C
25°C
VJ
T
C
=
V
120
F
0.8
DC
°C
V
160
1.0
F(AV)
C
0.1
10000
P
I
R
1000
(AV)
100
130
120
110
100
0.1
mA
W
90
80
70
60
50
40
30
20
10
10
0
1
0
0
Fig. 4 Forward power loss
T
125°C
100°C
25°C
75°C
50°C
VJ
=150°C
10
40
characteristics
Note: All curves are per diode.
20
1
s
80
Curves 2 and 5 will follow.
I
30
F(AV)
t
V
120
DSS2x111-008A
R
40
d =
DC
0.5
0.33
0.25
0.17
0.08
V
A
50
10
I
10000
FSM
C
1000
T
100
pF
A
0
DSS 2x111-008A
10
20
30
V
t
T
R
P
VJ
2 - 2
s
= 25°
40
V