T40HF120 Vishay, T40HF120 Datasheet - Page 7

• Manufacturer Part Number: T40HF120
• Description: DIODE STD REC 200V 40A D-55
• Manufacturer: Vishay

Specifications of T40HF120

• Current - Reverse Leakage @ Vr: 15mA @ 1200V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: D-55
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.3 V
• Forward Continuous Current: 40 A
• Max Surge Current: 600 A
• Reverse Current Ir: 15000 uA
• Mounting Style: Screw
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 40A
• Forward Voltage Vf Max: 1.3V
• Module Configuration: Single
• Peak Reflow Compatible (260 C): Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Voltage - Forward (vf) (max) @ If: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *T40HF120

Document Number: 93587
Revision: 20-May-10
Fig. 17 - Maximum Non-Repetitive Surge Current
1600
1400
1200
1000
800
600
400
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
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At Any Ra ted Loa d Cond ition And With
Ra ted V
R RM
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140
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
App lied Following S urge.
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0
0
0
10
0
RMS Limit
180°
120°
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
10 20
Initial T = 150°C
DC
90°
60°
30°
20
Average Forward Current (A)
Average Forward Current (A)
R MS Limit
180°
120°
40
90°
60°
30°
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30 40
T40HF..., T70HF..., T85HF..., T110HF... Series
Fig. 15 - Forward Power Loss Characteristics
60
Fig. 16 - Forward Power Loss Characteristics
(T-Modules), 40 A to 110 A
100
Power Rectifier Diodes
50 60
Conduc tion Period
80
Conduc tion Angle
T 85HF .. S eries
T = 150°C
T 85HF .. S eries
T = 150°C
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100
70 80
120
140
90
0
0
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
50
50
Fig. 18 - Maximum Non-Repetitive Surge Current
1800
1600
1400
1200
1000
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800
600
400
0.01
75
75
Maximum Non Repetitive S urge Current
T 85HF .. S eries
100
100
Pulse T rain Duration (s)
Vishay Semiconductors
125
Versus Pulse T rain Duration.
125
R ated V
No Voltage Reapplied
150
150
0.1
Initial T = 150°C
R RM
Reapplied
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