SI4738-C40-GUR Silicon Laboratories Inc, SI4738-C40-GUR Datasheet - Page 15

• Manufacturer Part Number: SI4738-C40-GUR
• Description: IC RX FM/WB RADIO 24SSOP
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4738-C40-GUR

• Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz, 162.4MHz ~ 162.55MHz
• Modulation Or Protocol: AM, FM, WB
• Applications: General Purpose
• Current - Receiving: 19.9mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Features: RSSI Equipped
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 24-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Sensitivity: -
• Memory Size: -
• Data Rate - Maximum: -

Table 11. WB Receiver Characteristics
(V
Table 12. AM Receiver Characteristics
(V
Parameter
Input Frequency
Sensitivity
Adjacent Channel Selectivity
Audio S/N
Audio Frequency Response Low
Audio Frequency Response High
Notes:
Input Frequency
Sensitivity
Large Signal Voltage
Handling
Power Supply Rejection Ratio
Audio Output Voltage
Audio S/N
Audio THD
Notes:
DD
DD
1. To ensure proper operation and receiver performance, follow the guidelines in “AN383: Si47xx Antenna, Schematic,
2. F
3. f = 3 kHz.
4. V
5. A-weighted.
6. Guaranteed by characterization
1. Additional testing information is available in “AN388: Si470x/1x/2x/3x/4x Evaluation Board Test Procedure.”
2. To ensure proper operation and receiver performance, follow the guidelines in “AN383: Si47xx Antenna, Schematic,
3. FMOD = 1 kHz, 30% modulation, 2 kHz channel filter.
4. Analog audio output mode.
5. B
6. Guaranteed by characterization.
7. See “AN388: Si470x/1x/2x/3x/4x Evaluation Board Test Procedure” for evaluation method.
8. V
9. Stray capacitance on antenna and board must be < 10 pF to achieve full tuning range at higher inductance levels.
= 2.7 to 5.5 V, VIO = 1.85 to 3.6V, T
= 2.7 to 5.5 V, V
Layout, and Design Guidelines.” Silicon Laboratories will evaluate schematics and layouts for qualified customers.
Volume = maximum for all tests. Tested at RF = 520 kHz.
Layout, and Design Guidelines.” Silicon Laboratories will evaluate schematics and layouts for qualified customers.
MOD
EMF
AF
IN
4,,6,7
2,3
2,3,4,5
= 5 mVrms.
3,4,5,6
3,4,5,8
= 300 Hz to 15 kHz, A-weighted.
Parameter
3,4,8
= 1 mV.
= 1 kHz.
IO
= 1.85 to 3.6 V, TA = –20 to 85 °C)
3,4,8
6
6
6
Symbol
A
f
= 25 °C)
RF
Symbol
f
1
1,2
R
ΔV
DD
(S+N)/N = 26 dB
Test Condition
= 100 mV
Rev. 1.0
THD < 8%
Test Condition
SINAD = 12 dB
±25 kHz
–3 dB
–3 dB
Mono
RMS
, 100 Hz
Si4736/37/38/39-C40
162.4
Min
520
Min
—
54
50
—
—
—
—
—
—
—
3
Typ
300
0.1
—
25
40
60
56
Typ
0.9
52
45
—
—
—
1710
Max
0.5
35
67
—
—
—
162.55
Max
300
—
—
—
—
µV EMF
mV
mV
Unit
µV EMF
kHz
dB
dB
%
RMS
RMS
MHz
Unit
kHz
dB
dB
Hz
15