AMMC-6420-W50 Avago Technologies US Inc., AMMC-6420-W50 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6420-W50
• Description: IC MMIC 1W POWER AMP 6-18GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of AMMC-6420-W50

• Function: Amplifier
• Operating Frequency: 18000 MHz
• Operating Supply Voltage: - 0.4 V
• Supply Current: 1000 mA
• Number Of Channels: 1 Channel
• Frequency (max): 18GHz
• Output Power: 29@18000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 5.5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

AMMC-6420 DC Specifications/Physical Properties
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (θ
AMMC-6420 RF Specifications
Notes:
3. Small/Large -signal data measured in wafer form T
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
Gain at 12 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc-
tion lots

Symbol
I
V
q
Symbol
Gain
P
P
OIP3
RLin
RLout
Isolation
d
LSL
ch-b
-1dB
-3dB
g
tance at backside temperature (T
more narrow bandwidth by application of additional conjugate, linearity, or power matching.
1
18
Parameters and Test Conditions
Small-signal Gain
Output Power at 1dB
Gain Compression
Output Power at 3dB
Gain Compression
Third Order Intercept Point;
Df=10MHz; Pin=-20dBm
Input Return Loss
Output Return Loss
Min. Reverse Isolation
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(V
Gate Supply Operating Voltage
(I
Thermal Resistance
(Backside temperature, T
d(Q)
d
=5.5 V, V
= 800 (mA))
19
g
set for I
[3, 4, 5]
b
0
[4]
[4]
) = 25°C calculated from measured data.
A
[4]
[2]
=25°C unless otherwise noted.
(T
d
Typical)
A
= 25°C, V
b
ch-b
= 25°C)
P-1dB at 8 GHz
) = 10.7°C/W at T

LSL
A
= 25°C.
d
=5.5, I
[1]
8
d(Q)=
channel
9
800 mA, Z
(T
Units
mA
V
°C/W
c
Units
dB
dBm
dBm
dBm
dB
dB
dB
0
) = 120°C as measured using infrared microscopy. Thermal Resis-
o
=50 Ω)
1
Min.
-0.8
Min.
16.5
27
P-1dB at 18 GHz
LSL
Typ.
800
-0.6
8.9
Typ.
20
29
30
38
-3
-6
-45
8
Max.
1000
-0.4
Max.
9
Sigma
0.45
0.27
0.23
0.75
0.23
0.25
1.10