AMMC-6440-W50 Avago Technologies US Inc., AMMC-6440-W50 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6440-W50
• Description: IC MMIC 1W POWER AMP 37-42GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of AMMC-6440-W50

• Function: Amplifier
• Operating Frequency: 42000 MHz
• Operating Supply Voltage: - 0.65 V
• Supply Current: 1050 mA
• Maximum Power Dissipation: 5500 mW
• Number Of Channels: 1 Channel
• Frequency (max): 42GHz
• Output Power: 28@42000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3V
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 5.5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Ratings [AMMC-6440]
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85 qC, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF.
AMMC-6440 DC Specifications/Physical Properties
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (θ
Thermal Properties
2
Symbols
Vd-Vg
Vd
Vg
Id
PD
Pin
Tch
Tstg
Tmax
Symbol
I
V
q
Parameter
Maximum Power Dissipation
Thermal Resistance (Tjc)
Thermal Resistance (Tjc)
Under RF Drive
d
g
ch-b
limitations will significantly reduce the lifetime of the device.
For maximum life, it is recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Channel tem-
perature Table
at backside temperature (T
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(V
Gate Supply Operating Voltage
Thermal Resistance
(Backside temperature, T
Parameters
Drain to Gate Voltage
Positive Supply Voltage
Gate Supply Voltage
Drain Current
Power Dissipation
CW Input Power
Operating Channel Temp
Storage Case Temp.
Maximum Assembly Temp (30 sec max)
(I
d(Q)
d
=5.5 V, V
= 950 (mA))
b
g
) = 25°C calculated from measured data.
set for I
A
=25°C unless otherwise noted.
[2]
d
Typical)
b
ch-b
Test Conditions
Tbaseplate = 85°C
Vd = 5.5V
Id = 950mA
PD = 5.23W
Tbaseplate = 85°C
Vd = 5.5V
Id = 1095mA
Pout = 28dBm
Pd = 5.43W
Tbaseplate = 85°C
= 25°C)
) = 9.0°C/W at T
[1]
channel
(T
c
) = 70°C as measured using infrared microscopy. Thermal Resistance
Units
mA
V
°C/W
Units
V
V
V
mA
W
dBm
qC
qC
qC
Min.
-2.5
Min.
-0.85
Value
PD = 5.5W
Tchannel = 150°C
Tjc = 6.4°C/W
Tchannel = 118°C
Tjc = 6.4°C/W
Tchannel = 120°C
Max.
8
5.5
0.5
TBD
5.5
20
+150
-65 to +155
+320
Typ.
950
-0.7
6.4
Notes
2
2, 3
2
4
Max.
1050
-0.65