AMMC-6241-W50 Avago Technologies US Inc., AMMC-6241-W50 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6241-W50
• Description: IC MMIC LO NOISE HIGAIN 26-43GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of AMMC-6241-W50

• Function: Amplifier
• Noise Figure Typ: 2.7dB
• Supply Current: 60mA
• Supply Voltage Range: 3V
• Frequency Max: 43GHz
• Frequency Min: 26GHz
• Supply Voltage Max: 7V
• Gain: 20dB
• Number Of Channels: 1
• Frequency (max): 43GHz
• Output Power: 10@38000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 3V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

AMMC-6241 DC Specifications/Physical Properties
AMMC-6241 RF Specifications
T
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (q
3. Small/Large -signal data measured in wafer form T
4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
6. As derived from measured s-parameters
Noise Figure at 32 GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
2
Symbol
I
q
Symbol
Gain
NF
P
OIP3
RLin
RLout
Isol
A
d
2.6
ch-b
-1dB
= 25°C, V
backside temperature (T
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
Parameters andTest Conditions
Small-signal Gain
Noise Figure into 50W
Output Power at 1dBGain Com-
pression
Third Order Intercept Point;
Df=100MHz; Pin=-35dBm
Input Return Loss
Output Return Loss
Reverse Isolation
Parameters and Test Conditions
Drain Supply Current (under any RF power drive and temperature) (V
Thermal Resistance
d
2.7
=3.0 V, I
d(Q)=
b
2.8
) = 25°C calculated from measured data.
[6]
[6]
[6]
60 mA, Z
[3, 4, 5]
[6]
[2]
(Backside temperature, Tb = 25°C)
A
USL
=25°C unless otherwise noted.
2.9
in
ch-b
=Z
Gain at 38 GHz
) = 26°C/W at T
LSL
o
Units
dB
dB
dBm
dBm
dB
dB
dB
A
=50 Ω
= 25°C.
[1]
19
Minimum
26-35 GHz = 20
35-40 GHz = 18.5
channel
(T
c
) = 34°C as measured using infrared microscopy. Thermal Resistance at
20
Typical
26-37 GHz = 21
37-40 GHz = 19.5
26-37 GHz = 2.7
37-40 GHz = 3.0
+10
+20
-13
-16
-40
d
=3.0 V)
Noise Figure at 38GHz
2.8
2.9
Units
mA
°C/W
Maximum
26-37 GHz = 3.0
37-40 GHz = 3.3
-11
-12
3
Min.
3.1
Typ.
60
25
3.2
Sigma
1.0
0.05
0.40
0.50
0.50
Max.
80
3.3
USL