AMMC-6222-W10 Avago Technologies US Inc., AMMC-6222-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6222-W10
• Description: IC MMIC LNA 7GHZ-21GHZ
• Manufacturer: Avago Technologies US Inc.

Specifications of AMMC-6222-W10

• Function: Amplifier
• Frequency Range: 7GHz To 21GHz
• Noise Figure Typ: 2.4dB
• Supply Current: 120mA
• Supply Voltage Range: 3V To 5V
• Frequency Max: 21GHz
• Frequency Min: 7GHz
• Supply Voltage Max: 5V
• Gain: 25dB
• Number Of Channels: 1
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3V
• Single Supply Voltage (typ): 4V
• Single Supply Voltage (max): 5V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Ratings
() Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at
an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties
(2) Ambient operational temperature TA=25
(3) Channel-to-backside Thermal Resistance (Tchannel = 34
measured data.
AMMC-6222 RF Specifications
T
(4) All tested parameters guaranteed with measurement accuracy ± 2dB for gain and PdB, ±0.8dB for NF and ±5dBm for OPI3 in the high output power configuration.
2
Parameters/Condition
Drain to Ground Voltage
Gate-Drain Voltage
Drain Current
RF CW Input Power Max
Max channel temperature
Storage temperature
Maximum Assembly Temp
Parameter and Test Condition
Drain Supply Current under any RF power drive and temp. (Vd=4.0 V)
Drain Supply Voltage
Thermal Resistance
Parameters and Test Conditions
Drain Current
Small-Signal Gain
Noise Figure into 50W
Output Power at dB Gain Compression
Output Third Order Intercept Point
Isolation
Input Return Loss
Output Return Loss
A
= 25°C, Vdd = 4.0 V, Idd=120mA, Zo=50 W
[4]
(3)
[4]
(1)
°
C unless noted
Symbol
Vdd
Vgd
Idd
Pin
Tch
Tstg
Tmax
Symbol
Idd
Gain
NF
P-dB
OIP3
Iso
RLin
RLout
(2)
°
C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25
Unit
V
V
mA
dBm
C
C
C
Unit
mA
dB
dB
dBm
dBm
dB
dB
dB
Freq
(GHz)
9, 2, 7
9
2
7
9, 2, 7
Max
5.5
-0
70
0
+50
-65 +50
260 for 20s
High Output
Power Configuration
Min
20
3
26
Symbol
Idd
Vd
θjc
Typical
20
26
2.7
2.5
2.7
5.5
28
-50
-0
-0
Unit
mA
V
°C/W
Max
2.8
2.8
2.8
Min
80
3
Low Output
Power Configuration
Min
Typ
20
4
3.4
Typical
95
24
2.4
2.4
2.4
5
27
-50
-0
-0
°
C calculated from
Max
60
5
Max