AMMC-5026-W10 Avago Technologies US Inc., AMMC-5026-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-5026-W10
• Description: IC MMIC AMP TWA GAAS 2-35GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of AMMC-5026-W10

• Function: Amplifier
• Noise Figure Typ: 4.3dB
• Supply Current: 350mA
• Supply Voltage Range: 7V
• Frequency Max: 35GHz
• Frequency Min: 2GHz
• Supply Voltage Max: 10V
• Gain: 10.5dB
• Number Of Channels: 1
• Frequency (max): 35GHz
• Output Power: 24@10000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 10V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1846; AMMC-5026-W10

AMMC-5026 DC Specifications/Physical Properties
Symbol
I
V
V
I
(V
θ
Notes:
1. Backside temperature T
2. Channel-to-backside Thermal Resistance (θ
RF Specifications
(V
Symbol
|S
∆|S
RL
RL
|S
P
P
OIP3
NF
H2
H3
Notes:
1. Data measured in wafer form, T
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
2
dss
dsoff
ch-b
-1dB
sat
p1
g2
21
12
g1
dd
at backside temperature (T
in
out
|
|
21
)
2
2
= 7V, I
|
2
dd
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Output 3
RF
Noise Figure
Second Harmonic (P
Third Harmonic (P
Parameters and Test Conditions
Saturated Drain Current
(V
First Gate Pinch-off Voltage
(V
Second Gate Self-bias Voltage
(V
First Gate Pinch-off Current
(V
Thermal Resistance
(Backside temperature, T
(Q) = 150 mA, Z
in1
dd
dd
dd
dd
= RF
=7 V, V
=7 V, I
=7 V, I
=7 V, V
[3,4]
in2
rd
Order Intercept Point,
dd
dd
= - 20 dBm, f = 10 GHz, ∆f = 2 MHz
g1
g1
b
=0.1 I
=150 mA, V
= 25°C unless otherwise noted.
=3.5 V, V
=0 V, V
b
) = 25°C calculated from measured data.
in
chuck
dss
in
= 12 dBm at 10 GHz)
g2
in
, V
[2]
= Z
=open circuit)
g2
= 12 dBm at 10 GHz)
= 25°C.
g2
=open circuit)
g2
=open circuit)
0
=open circuit)
= 50Ω)
b
= 25°C)
ch-b
) = 38°C/W at T
[1]
f = 10 GHz
f = 10 GHz
f = 10 GHz
f = 20 GHz
channel
(T
c
) = 150°C as measured using the liquid crystal method. Thermal Resistance
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dBc
dBc
Units
mA
V
V
mA
°C/W
Min.
8.5
13
12
23
22
Min.
250
Typ.
10.5
±0.75
17
15
26
24
26
31
3.6
4.3
-20
-30
Typ.
350
-1.2
3.5
75
28
Max.
12.5
±1.5
-17.5
-28
Max.
450