AMMC-6345-W10 Avago Technologies US Inc., AMMC-6345-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-6345-W10
• Description: IC MMIC DRIVER AMP MPWR 20-45GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of AMMC-6345-W10

• Function: Amplifier
• Supply Current: 480mA
• Supply Voltage Range: 5V
• Frequency Max: 45GHz
• Frequency Min: 20GHz
• Supply Voltage Max: 7V
• Gain: 20dB
• Number Of Channels: 1
• Frequency (max): 45GHz
• Output Power: 24@38000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 5.5V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1851; AMMC-6345-W10

Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85 qC, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF. For maximum life, it is
AMMC-6345 DC Specifications/Physical Properties
Notes:
1. Ambient operational temperature T
2. Channel-to-backside Thermal Resistance (T
Thermal Properties
2
Symbols
Vd-Vg
Vd
Vg
Id
PD
Pin
Tch
Tstg
Tmax
Symbol
Id
Vg
Vp
Tch-b
Parameter
Maximum Power Dissipation
Thermal Resistance (Tjc)
Thermal Resistance (Tjc)
Under RF Drive
limitations will significantly reduce the lifetime of the device.
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
at backside temperature (T
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(Vd=5.0V, Vg set for Id typical)
Gate Supply Operating Voltage I
Pinch-off voltage (Vdd=2.5V, Ids=20mA)
Thermal Resistance
Parameters
Drain to Gate Voltage
Positive Supply Voltage
Gate Supply Voltage
Drain Current
Power Dissipation
CW Input Power
Operating Channel Temp
Storage Case Temp.
Maximum Assembly Temp (30 sec max)
b
) = 25°C calculated from measured data.
A
[2]
=25°C unless otherwise noted.
Backside temperature, Tb=25°C
ch-b
Test Conditions
Tbaseplate = 85°C
Vd = 5V
Id = 480mA
PD = 2.4W
Tbaseplate = 85°C
Vd = 5V
Id = 510mA
Pout = 24dBm
Pd = 2.3W
Tbaseplate = 85°C
) = 9.0°C/W at T
d(Q)
= 480mA
[1]
channel
Units
V
V
V
mA
W
dBm
qC
qC
qC
(T
c
) = 70°C as measured using infrared microscopy. Thermal Resistance
Minimum
-2.5
Units
mA
V
V
°C/W
Value
PD = 3.5W
Tchannel = 150°C
Tjc = 8.2°C/W
Tchannel = 104°C
Tjc = 8.2°C/W
Tchannel = 104°C
Min.
-0.75
Maximum
5.5
0.5
23
+150
-65 to +155
+320
8
TBD
3.5
Typ.
480
-0.55
-1.2
8.2
Notes
2
4
2
2 and 3
Max.
600
-0.4