SGA-3563 Sirenza Microdevices Inc, SGA-3563 Datasheet

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SGA-3563

Manufacturer Part Number
SGA-3563
Description
IC AMP HBT SIGE 5000MHZ SOT-363
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-3563

Current - Supply
31mA ~ 39mA
Frequency
0Hz ~ 5GHz
Gain
19.5dB ~ 23.5dB
Noise Figure
2.7dB ~ 3.7dB
P1db
11dBm ~ 12.5dBm
Package / Case
SC-70-6, SC-88, SOT-363
Rf Type
Cellular, GSM, PCS, UMTS
Test Frequency
1.95GHz
Voltage - Supply
3V ~ 3.5V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Product Description
The SGA3563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high F
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
DS100831
Optimum Technology
Small Signal Gain
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance
Test Conditions: I
Matching ® Applied
Loss
(Junction - Lead)
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Parameter
D
= 35 mA Typ., T
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
L
= 25°C, Z
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA3563ZDC
to 5000 MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
32
24
16
16
8
0
0
IRL
Min.
23.5
19.5
11.0
22.5
11.2
11.2
3.0
31
S
= Z
GAIN
1
L
= 50 P
Gain & Return Loss vs. Frequency
V
D
Specification
ORL
= 3.25V, I
Frequency (GHz)
2
OUT
5000
Typ.
25.5
21.5
20.0
13.0
12.5
24.0
24.5
15.5
20.0
3.25
255
2.7
35
D
per tone = -5 dBm, OIP
= 35mA (Typ.)
3
T
and excellent thermal per-
4
Max.
27.5
23.5
3.7
3.5
39
DC to 5000 MHz, CASCADABLE SiGe HBT
5
3
0
-10
-20
-30
-40
20
Tone Spacing = 1 MHz
°C/W
Unit
dBm
dBm
dBm
dBm
MHz
mA
dB
dB
dB
dB
dB
dB
V
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
>10 dB
1950 MHz
1950 MHz
1950 MHz
Applications
Features
High Gain: 25.5 dB at
850 MHz
Cascadable 50 Gain Block
High Output IP
typ. at 1950 MHz
Low Noise Figure: 2.7 dB typ.
at 1950 MHz
Low Current Draw: 35 mA typ.
Single Voltage Supply Opera-
tion
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
SGA3563Z
Condition
MMIC AMPLIFIER
Package: SOT-363
3
: 24.5 dBm
1 of 7

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SGA-3563 Summary of contents

Page 1

... SiGe HBT MMIC Ampli- fier Product Description The SGA3563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con- figuration featuring one-micron emitters provides high F formance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products ...

Page 2

... SGA3563Z Absolute Maximum Ratings Parameter Max Device Current ( Max Device Voltage ( Max RF Input Power Max Junction Temp ( Operating Temp Range ( Max Storage Temp ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level (MSL) Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100831 =+25ºC LEAD 0 2.5 3 3.5 0 Noise Figure vs. Frequency (Typ LEAD 0 0 0.5 1 1.5 2 Frequency (GHz) SGA3563Z P vs. Frequency 1dB (Typ =+25ºC LEAD 0.5 1 1.5 2 2.5 3 Frequency (GHz) =+25ºC 2 ...

Page 4

... SGA3563Z Typical RF Performance Over Lead Temperature -- Bias: ID (Typ.) at TLEAD = +25º vs. Frequency -40C 8 25C +85C Frequency (GHz vs. Frequency 12 0 -10 -20 -30 - Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com -10 -20 -30 - -10 -20 -40C -30 +25C +85C ...

Page 5

... Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants recommend ounce copper. Measure- ments for this data sheet were made mil thick Getek with 1 ounce copper on both sides. Package Drawing Dimensions in inches (millimeters) SGA3563Z ...

Page 6

... SGA3563Z R BIAS 1000 1 SGA3563Z C 4,5 B 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Application Schematic Reference I Designator LDC Bias L C Inductor L Recommended Bias Resistance for I C Supply Voltage (V (Volts out Bias Resistance* V (Ohms Bias Resistance = R ...

Page 7

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100831 Part Identification A35Z Lead Free RoHs Compliant Ordering Information Description 7" Reel with 3000 pieces Sample Bag with 25 pieces 7” Reel with 100 pieces 850MHz, 5V Operation PCBA with 5-piece sample bag SGA3563Z ...

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