SGA-2163 Sirenza Microdevices Inc, SGA-2163 Datasheet - Page 2

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SGA-2163

Manufacturer Part Number
SGA-2163
Description
IC AMP HBT SIGE 5000MHZ SOT-363
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-2163

Current - Supply
17mA ~ 23mA
Frequency
0Hz ~ 5GHz
Gain
9.8dB
Noise Figure
4.4dB
P1db
6.2dBm
Package / Case
SC-70-6, SC-88, SOT-363
Rf Type
Cellular, GSM, PCS, UMTS
Test Frequency
1.95GHz
Voltage - Supply
1.9V ~ 2.5V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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SGA-2163(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temperature (T
Operating Temperature Range (T
Max Storage Temperature
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Output Power at 1dB Compression
Output Third Order Intercept Point
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
Output Return Loss
30
25
20
15
10
Small Signal Gain
Input Return Loss
Reverse Isolation
Parameter
J
Noise Figure
Parameter
-T
0
L
)/R
S
TH
=5V, I
, j-l
0.5
D
D
)
)
D
=20mA Typ., OIP
OIP
J
V
)
D
1
Frequency (GHz)
= 2.2 V, I
L
)
3
vs. Frequency
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1.5
D
Unit
dBm
dBm
3
= 20 mA
dB
dB
dB
dB
dB
Tone Spacing=1MHz, P
7
6
5
4
3
2
0
2
-40 to +85
Rating
T
+150
+150
+18
L
40
T
4
L
100MHz
=+25ºC
Noise Figure vs. Frequency
2.5
0.5
18.7
10.7
15.6
17.2
V
D
= 2.2 V, I
3
1
OUT
Frequency (GHz)
per tone=-10dBm, R
500MHz
1.5
Unit
dBm
mA
°C
10.6
20.9
19.8
19.1
15.4
°C
°C
V
7.2
4.2
D
= 20 mA
10
2
8
6
4
2
0
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
T
850MHz
0
L
=+25ºC
T
L
10.5
20.3
22.3
15.5
21.0
BIAS
=+25ºC
2.5
4.1
7.1
=140Ω, T
Caution! ESD sensitive device.
0.5
P
V
3
1dB
1950MHz 2400MHz 3500MHz
D
= 2.2 V, I
L
1
=25°C, Z
Frequency (GHz)
vs. Frequency
18.0
22.5
24.8
16.1
9.8
6.2
4.4
1.5
D
S
= 20 mA
=Z
L
=50Ω
2
16.9
22.1
23.4
16.4
9.6
5.6
4.8
T
L
T
L
=+25ºC
2.5
DS090924
16.0
27.6
16.9
9.3
3

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