MD7IC21100NR1 Freescale Semiconductor, MD7IC21100NR1 Datasheet

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MD7IC21100NR1

Manufacturer Part Number
MD7IC21100NR1
Description
IC PWR AMP RF 2170MHZ TO-270-14
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MD7IC21100NR1

Current - Supply
925mA
Frequency
2.11GHz ~ 2.17GHz
Gain
28.5dB
P1db
110W
Package / Case
TO-270-14
Rf Type
W-CDMA
Voltage - Supply
32V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Test Frequency
-
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
• Typical Single- Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, P
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 100 Watts
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
• Internally Matched for Ease of Use
• Integrated Quiescent Current Temperature Compensation with
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
The MD7IC21100N wideband integrated circuit is designed with on - chip
I
f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
CW (3 dB Input Overdrive from Rated P
CW P
and Common Source S-Parameters
Enable/ Disable Function
DQ1B
V
V
V
V
V
V
RF
RF
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
DS1A
GS1A
GS2A
GS1B
GS2B
DS1B
Power Gain — 28.5 dB
Power Added Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
inA
inB
out
= 190 mA, I
.
out
@ 1 dB Compression Point ] 110 Watts CW
Figure 1. Functional Block Diagram
DQ2A
= I
Temperature Compensation
Temperature Compensation
(1)
DQ2B
Quiescent Current
Quiescent Current
= 925 mA, P
out
)
out
(1)
(1)
= 32 Watts Avg.,
DD
= 28 Volts, I
out
= 110 Watts
DQ1A
RF
RF
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
out1
out2
=
/V
/V
DS2A
DS2B
INTEGRATED POWER AMPLIFIERS
Note: Exposed backside of the package is
MD7IC21100NBR1
Document Number: MD7IC21100N
MD7IC21100NR1
V
2110 - 2170 MHz, 32 W Avg., 28 V
TO - 270 WB - 14
TO - 272 WB - 14
V
V
V
V
V
CASE 1618 - 02
CASE 1617 - 02
RF
RF
GS1B
DS1A
GS2A
GS1A
GS2B
DS1B
MD7IC21100GNR1
MD7IC21100NBR1
NC
NC
NC
NC
inA
inB
MD7IC21100NR1
PLASTIC
PLASTIC
the source terminal for the transistors.
Figure 2. Pin Connections
RF LDMOS WIDEBAND
SINGLE W - CDMA
10
12
11
1
2
3
4
5
6
7
8
9
(Top View)
TO - 270 WB - 14 GULL
MD7IC21100GNR1
CASE 1621 - 02
14
13
Rev. 0, 10/2008
PLASTIC
RF
RF
out1
out2
/V
/V
DS2A
DS2B
1

Related parts for MD7IC21100NR1

MD7IC21100NR1 Summary of contents

Page 1

... Watts out ) out RF /V out1 DS2A (1) ( out2 DS2B MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Document Number: MD7IC21100N Rev. 0, 10/2008 MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2110 - 2170 MHz Avg SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618 - 270 PLASTIC MD7IC21100NR1 CASE 1621 - 270 GULL ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Each side of device measured separately. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2 Stage 1, 28 Vdc 190 mA DQ1A ...

Page 3

... GS G PAE PAR ACPR IRL = 28 Vdc P1dB IMD VBW = 32 W Avg. G out ΔI (4) Φ Delay = 110 W CW, ΔΦ out ΔG ΔP1dB MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Min Typ Max — — 10 — — 1 — — — 2.8 — 5.3 5.9 6.8 0.1 ...

Page 4

... Z3 0.628″ x 0.045″ Microstrip Z4 0.628″ x 0.340″ Microstrip Z5 0.066″ x 0.581″ Microstrip Figure 3. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part C1, C2, C3, C4, C5 μ Chip Capacitors C7, C8, C9, C10 5.1 pF Chip Capacitors ...

Page 5

... R6 V GG2 GG1 MD7IC21100N Rev GG1 GG2 R5 Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor DD1 C9 C12 C15 C13 C8 C2 C10 Single−ended Quadrature combined Doherty Push−pull Possible Circuit Topologies Figure 5. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 C3 C18 C16 C4 C11 ...

Page 6

... P , OUTPUT POWER (WATTS) CW out Figure 7. Power Gain versus Output Power @ 190 mA DQ1A DQ1B −10 −20 −30 −40 −50 −60 MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.), out DQ1A DQ1B 925 mA, Single−Carrier W−CDMA DQ2A DQ2B D 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF ...

Page 7

... Efficiency and ACPR versus Output Power Gain IRL Vdc dBm out DQ1A DQ1B DQ2A DQ2B 1750 1850 1950 2050 2150 2250 2350 2450 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 − −25 ACPR −30 35 − −40 25 −45 20 PARC − ...

Page 8

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 8 TYPICAL CHARACTERISTICS 1st Stage 2nd Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 f = 2220 MHz = 32 W Avg. out Output Matching Network 9 ...

Page 10

... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 48.64 - j0.94 Figure 17. Pulsed CW Output Power versus Input Power @ 2110 MHz MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 10 56 Ideal P3dB = 52.59 dBm (182 P1dB = 51.94 dBm (156 W) 53 ...

Page 11

... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 = I = 925 mA 25°C, 50 Ohm System) DQ2B ∠ φ ∠ φ 22 110.1 0.986 170.7 - 161.5 0.962 166.0 148.5 ...

Page 12

... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 13 ...

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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 14 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 15 ...

Page 16

... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 16 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 17 ...

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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 18 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 19 ...

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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 20 RF Device Data Freescale Semiconductor ...

Page 21

... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 21 ...

Page 22

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Document Number: MD7IC21100N Rev. 0, 10/2008 22 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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