MW7IC3825GNR1 Freescale Semiconductor, MW7IC3825GNR1 Datasheet - Page 3

• Manufacturer Part Number: MW7IC3825GNR1
• Description: IC PWR AMP RF 3500MHZ TO-270-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC3825GNR1

• Current - Supply: 230mA
• Frequency: 3.4GHz ~ 3.6GHz
• Gain: 25dB
• P1db: 30W
• Package / Case: TO-270-16
• Rf Type: WiMax
• Test Frequency: 3.6GHz
• Voltage - Supply: 32V
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 25dB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: TO-270 WB EP
• Pin Count: 16
• Output Capacitance (typ)@vds: 72.3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 15%
• Mounting: Surface Mount
• Mode Of Operation: OFDM/WIMAX
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 - - Off Characteristics
Stage 2 - - On Characteristics
Stage 2 - - Dynamic Characteristics
Functional Tests
f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Typical Performances OFDM Signal - - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) V
130 mA, I
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Output Capacitance
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Relative Constellation Error
Error Vector Magnitude
1. V
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
4. RCE = 20Log(EVM/100).
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DQ2
= 1.22 x V
= 230 mA, P
(3)
D
DQ2
DQ2
D
GS(Q)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
DS
= 120 μAdc)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 230 mA)
= 230 mA, Measured in Functional Test)
= 0 Vdc)
(4)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
out
= 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
(4)
Characteristic
(1)
(2)
(T
A
= 25°C unless otherwise noted)
GS
3
/
4
= 0 Vdc)
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
DD
= 28 Vdc, I
(continued)
Symbol
V
V
V
V
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
ACPR
RCE
EVM
I
I
I
DS(on)
C
DQ1
PAE
PAR
GG(Q)
GS(th)
GS(Q)
G
GSS
IRL
DSS
DSS
oss
ps
= 130 mA, I
Min
1.2
2.5
0.2
7.5
21
12
—
—
—
—
—
—
—
—
—
DQ2
= 230 mA, P
72.3
Typ
--48
--12
--33
2.7
3.3
0.5
8.5
2.2
25
15
—
—
—
2
3
/
4
, 4 Bursts, 10 MHz Channel
out
DD
= 5 W Avg.,
= 28 Vdc, I
Max
--45
2.7
1.2
10
32
--6
—
—
—
—
—
—
1
1
4
(continued)
DQ1
% rms
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
pF
dB
dB
dB
dB
=
%
3