MWE6IC9100NBR1 Freescale Semiconductor, MWE6IC9100NBR1 Datasheet - Page 3

• Manufacturer Part Number: MWE6IC9100NBR1
• Description: IC PWR AMP RF LDMOS TO272-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100NBR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-272-14 WBL
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Package Type: TO-272 WB
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
I
DQ2
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Power Gain
Input Return Loss
Power Added Efficiency
P
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
out
(V
(V
(V
(V
(V
(V
(V
= 870 mA, 869-894 MHz and 920-960 MHz EDGE Modulation
DS
DS
GS
DS
DS
DD
GS
@ 1 dB Compression Point, CW
= 66 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 5 Vdc, V
= 26 Vdc, I
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 290 μAdc)
= 950 mAdc)
= 950 mAdc, Measured in Functional Test)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
(T
C
= 25°C unless otherwise noted) (continued)
DD
= 26 Vdc, P
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
Symbol
V
V
V
V
out
P1dB
EVM
I
I
I
DS(on)
PAE
PAE
SR1
SR2
GG(Q)
GS(th)
GS(Q)
G
G
IRL
DSS
DSS
GSS
= 100 W CW, I
ps
ps
0.05
Min
100
DD
1.5
31
52
—
—
—
—
—
—
—
—
—
—
6
DQ1
= 28 Vdc, P
= 120 mA, I
33.5
35.5
Typ
112
- 15
- 63
- 81
2.7
8.6
0.4
54
39
—
—
—
2
2
out
= 50 W Avg., I
DQ2
= 950 mA, f = 960 MHz
Max
3.5
0.8
- 10
10
10
12
36
—
—
—
—
—
—
—
—
1
DQ1
= 230 mA,
% rms
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
W
%
%
3