MWE6IC9100GNR1 Freescale Semiconductor, MWE6IC9100GNR1 Datasheet - Page 8

• Manufacturer Part Number: MWE6IC9100GNR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100GNR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-270-14 Gull Wing
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
8
−45
−50
−55
−60
−65
−70
−75
−80
−60
−65
−70
−75
−80
−85
−90
6
5
4
3
2
1
0
880
0
0
V
I
DQ1
DD
Figure 17. Spectral Regrowth at 400 kHz
Figure 19. Spectral Regrowth at 600 kHz
V
I
f = 945 MHz, EDGE Modulation
T
DQ1
DD
C
= 28 Vdc
= 230 mA, I
= −30_C
Figure 15. EVM versus Frequency
versus Output Power @ 945 MHz
= 28 Vdc
versus Output Power @ 945 MHz
= 230 mA, I
20
20
900
P
P
DQ2
T
out
out
85_C
C
DQ2
, OUTPUT POWER (WATTS)
, OUTPUT POWER (WATTS)
= −30_C
f, FREQUENCY (MHz)
40
40
= 870 mA
920
= 870 mA
P
out
85_C
= 63 W Avg.
55 W Avg.
25 W Avg.
60
60
25_C
V
I
f = 945 MHz, EDGE Modulation
25_C
DQ1
DD
940
= 28 Vdc
= 230 mA, I
80
80
TYPICAL CHARACTERISTICS
960
DQ2
100
100
= 870 mA
980
120
120
−50
−55
−60
−65
−70
−75
−80
−85
−40
−45
−50
−55
−60
−65
−70
−75
−80
−50
−55
−60
−65
−70
−75
−80
−85
860
0
0
SR @ 600 kHz
Figure 16. Spectral Regrowth at 400 kHz and
SR @ 400 kHz
Figure 18. Spectral Regrowth at 400 kHz
Figure 20. Spectral Regrowth at 600 kHz
V
I
f = 880 MHz, EDGE Modulation
25 W Avg.
T
DQ1
DD
C
= −30_C
880
versus Output Power @ 880 MHz
= 28 Vdc
versus Output Power @ 880 MHz
= 230 mA, I
20
20
85_C
T
55 W Avg.
600 kHz versus Frequency
C
= −30_C
25 W Avg.
P
P
out
out
900
, OUTPUT POWER (WATTS)
DQ2
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
40
40
P
55 W Avg.
= 870 mA
out
= 63 W Avg.
920
60
60
V
I
f = 920 MHz, EDGE Modulation
DQ1
DD
V
I
f = 880 MHz, EDGE Modulation
DQ1
Freescale Semiconductor
DD
= 28 Vdc
= 230 mA, I
85_C
= 28 Vdc
= 230 mA, I
940
80
80
DQ2
RF Device Data
DQ2
= 870 mA
63 W Avg.
960
100
100
= 870 mA
25_C
25_C
980
120
120