MW7IC2725GNR1 Freescale Semiconductor, MW7IC2725GNR1 Datasheet
MW7IC2725GNR1
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MW7IC2725GNR1 Summary of contents
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... DQ1 DQ2 MW7IC2725NR1 ) out MW7IC2725NBR1 RF /V out DS2 (1) Note: Exposed backside of the package is MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 Rev. 3, 1/2010 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2500-2700 MHz AVG WiMAX RF LDMOS WIDEBAND CASE 1886-01 TO-270 WB-16 PLASTIC CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC2725GNR1 CASE 1329-09 ...
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... Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2 Stage 1, 28 Vdc DQ1 ...
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... I GSS V GS(th) V GS(Q) V GG(Q) V DS(on) C oss = 0 Vdc Vdc mA DQ1 G ps PAE PAR ACPR IRL RCE EVM MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 Min Typ Max Unit μAdc — — 10 μAdc — — 1 μAdc — — 1 1.2 1.9 2.7 Vdc — 2.7 — Vdc 11 14 ...
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... CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ P = 1.25 W Avg. out 1. RCE = 20Log(EVM/100) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 4 (continued) = 25°C unless otherwise noted) Symbol = 28 Vdc mA DQ1 P1dB ...
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... Microstrip Z14 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, ε PCB * Line length includes microstrip bends Description 2743019447 ATC600S6R8CT250XT C0603C103J5RAC GRM32RR71H105KA01B ATC600S2R4BT250XT ATC600S3R3BT250XT GRM55DR61H106KA88B CRCW12061202FKEA CRCW12061001FKEA MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 C16 C15 C14 C13 C12 Z13 Z10 Z11 ...
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... Figure 4. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 6 C17 C15 C9 C8 C14 C7 C13 C10 MW7IC2725N Rev. 1.3 B1 C16 C12 C11 RF Device Data Freescale Semiconductor ...
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... DQ2 Bursts, 10 MHz Channel Bandwidth 4 PARC IRL 2525 2550 2575 2600 2625 2650 f, FREQUENCY (MHz 100 0.1 Figure 8. Power Gain versus Output Power MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 -53 -16 -0.2 -54 -0.4 -18 -55 -0.6 -20 -56 -0.8 -22 -57 -1 -24 -58 -26 -1.2 2675 2700 = 4 Watts Avg. ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 8 TYPICAL CHARACTERISTICS Vdc (PEP out DQ1 I = 275 mA, Two-Tone Measurements DQ2 (f1 + f2)/2 = Center Frequency of 2600 MHz IM3-U IM3-L IM5-L IM5-U IM7-L IM7-U 10 TWO-T ONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing Vdc mA 275 2600 MHz, OFDM ...
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... Figure 13. MTTF versus Junction Temperature WIMAX TEST SIGNAL -10 -20 Input Signal -30 -40 -50 -60 -70 - -90 -20 Figure 15. WiMAX Spectrum Mask Specifications MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 1st Stage 2nd Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Vdc Avg., and PAE = 17%. DD out 10 MHz ...
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... Z load f = 2500 MHz Figure 16. Series Equivalent Source and Load Impedance MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 Ω 2700 MHz f = 2700 MHz Z source f = 2500 MHz Vdc mA 275 mA DQ1 DQ2 out source W MHz 2500 36.381 - j4.271 5.717 - j3.618 2525 36.041 - j3.328 5.624 - j3.187 2550 35.753 - j2.363 5 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 = 25°C, 50 Ohm System ∠ φ ∠ φ 26.6 0.992 167.9 34.7 0.993 166.3 109.5 0.991 164.6 148.4 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 mA 275 mA DQ1 DQ2 S 21 ∠ φ 2.257 32.6 0.00265 2.054 19.2 0.00280 1.851 5 ...
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... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ load Ω P1dB 4.86 - j1.63 Figure 18. Pulsed CW Output Power versus Input Power @ 2700 MHz MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 P3dB = 44.46 dBm (35 W) Ideal P1dB = 45.42 dBm ( Vdc mA DQ1 DQ2 Pulsed CW, 10 μsec(on), 10% Duty Cycle, ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 15 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 17 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 19 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 20 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 21 ...
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... MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 22 RF Device Data Freescale Semiconductor ...
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... Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximum input power level to the tested value from 20 dBm to 22 dBm • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes Device Data Freescale Semiconductor REVISION HISTORY Description MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 23 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 Document Number: MW7IC2725N Rev. 3, 1/2010 24 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...