MW7IC2040NR1 Freescale Semiconductor, MW7IC2040NR1 Datasheet - Page 3

• Manufacturer Part Number: MW7IC2040NR1
• Description: IC PWR AMP RF 1990MHZ TO-270-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC2040NR1

• Current - Supply: 75mA
• Frequency: 100MHz ~ 1GHz
• Gain: 23.5dB
• P1db: 11W
• Package / Case: TO-270-16
• Rf Type: General Purpose
• Test Frequency: 100MHz
• Voltage - Supply: 32V
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Stage 2 — Dynamic Characteristics
Functional Tests
f = 1932.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Output Capacitance
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
P
IMD Symmetry @ 22 W PEP, P
VBW Resonance Point
Quiescent Current Accuracy over Temperature
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Part internally matched both on input and output.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
out
(V
(V
(V
(V
(V
(V
(V
(V
Intermodulation
between Upper and Lower Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
with 5.6 kΩ Gate Feed Resistors ( - 30 to 85°C)
@ P
f = 1960 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
DS
DS
GS
DS
DS
DD
GS
DS
@ 1 dB Compression Point, CW
out
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 1.5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
= 30 W CW
(3)
`
D
DQ2
DQ2
D
GS
GS
(In Freescale Test Fixture, 50 ohm system) V
DS
= 140 μAdc)
= 1 Adc)
30 dBc (Delta IMD Third Order Intermodulation
= 0 Vdc)
= 0 Vdc)
= 330 mAdc)
= 330 mAdc, Measured in Functional Test)
= 0 Vdc)
out
Characteristic
= 30 W CW, f = 1960 MHz
out
where IMD Third Order
(1)
(T
out
C
= 25°C unless otherwise noted) (continued)
out
= 4 W Avg.
GS
= 30 W CW,
(2)
= 0 Vdc)
DD
DD
= 28 Vdc, I
= 28 Vdc, I
Symbol
VBW
V
IMD
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
V
V
V
ΔP1dB
ACPR
Delay
P1dB
I
I
I
DS(on)
C
PAE
ΔI
GG(Q)
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
DQ1
ΔΦ
ΔG
G
Φ
oss
QT
ps
sym
F
DQ1
res
= 130 mA, I
= 130 mA, I
29.5
Min
1.2
0.2
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
DQ2
DQ2
= 330 mA, P
= 330 mA, 1930 - 1990 MHz
0.029
0.003
0.39
17.5
Typ
246
- 50
- 15
2.8
1.2
0.5
2.5
32
30
60
65
±3
33
—
—
—
2
8
out
= 4 W Avg.,
Max
34.5
2.7
1.2
- 46
10
—
—
—
- 8
—
—
—
—
—
—
—
—
—
—
1
1
9
(continued)
dBm/°C
dB/°C
μAdc
μAdc
μAdc
MHz
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
W
ns
%
%
°
°
3