MW7IC2040NBR1 Freescale Semiconductor, MW7IC2040NBR1 Datasheet - Page 28

• Manufacturer Part Number: MW7IC2040NBR1
• Description: IC PWR AMP RF 1990MHZ TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC2040NBR1

• Current - Supply: 75mA
• Frequency: 100MHz ~ 1GHz
• Gain: 23.5dB
• P1db: 11W
• Package / Case: TO-272-16
• Rf Type: General Purpose
• Test Frequency: 100MHz
• Voltage - Supply: 32V
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
28
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
Feb. 2009
Nov. 2009
Date
• Initial Release of Data Sheet
• Updated Human Body Model ESD from Class 1C to 1B to reflect Human Body Model actual test data,
• Fig. 13, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single - Carrier Test Signal and
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 2
Fig. 14, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal, p. 9
Product Documentation, Application Notes, p. 28
p. 28
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data