MW6IC2240NBR1 Freescale Semiconductor, MW6IC2240NBR1 Datasheet - Page 8

• Manufacturer Part Number: MW6IC2240NBR1
• Description: IC PWR AMP RF 28V 4.5W TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW6IC2240NBR1

• Current - Supply: 210mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 28dB
• Package / Case: TO-272-16
• Rf Type: Cellular, W-CDMA
• Voltage - Supply: 28V
• Drain Source Voltage (max): 68V
• Output Power (max): 4.5W
• Power Gain (typ)@vds: 28dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 15%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA/TD-SCDMA
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MW6IC2240NBR1 MW6IC2240GNBR1
8
36
32
28
24
20
16
12
0.1
V
I
f = 2140 MHz
DQ1
DD
Figure 13. Power Gain and Power Added
= 28 Vdc
= 210 mA, I
Efficiency versus Output Power
DQ2
P
out
1
= 370 mA
T
, OUTPUT POWER (WATTS) CW
C
= −30_C
25_C
85_C
PAE
10
10
10
10
9
8
7
6
90
10
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
TYPICAL CHARACTERISTICS
110
G
ps
−30_C
T
130
85_C
2nd Stage
J
DD
25_C
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
100
150
60
50
40
30
20
10
0
1st Stage
out
170
= 4.5 W Avg., and PAE = 15%.
30
29
28
27
26
25
24
190
0
Figure 14. Power Gain versus Output Power
210
10
P
230
out
, OUTPUT POWER (WATTS) CW
20
250
30
V
Freescale Semiconductor
DD
= 24 V
40
RF Device Data
I
I
f = 2140 MHz
DQ1
DQ2
28 V
50
= 210 mA
= 370 mA
32 V
60