MW6IC2420NBR1 Freescale Semiconductor, MW6IC2420NBR1 Datasheet
MW6IC2420NBR1
Specifications of MW6IC2420NBR1
Available stocks
Related parts for MW6IC2420NBR1
MW6IC2420NBR1 Summary of contents
Page 1
... MHz LDMOS INTEGRATED POWER AMPLIFIER CASE 1329 - 272 PLASTIC GND 1 16 GND V 2 DS1 out in V DS2 GS1 V 9 GS2 DS1 12 GND 11 GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections MW6IC2420NBR1 1 ...
Page 2
... Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW6IC2420NBR1 2 Stage 1, 28 Vdc 210 mA DQ ...
Page 3
... Min Typ Max = 210 mA 370 mA, 2110 - 2170 MHz DQ2 — 30 — — ±5 — — 0.2 — — 2 — — 2.8 — — 18 — Min Typ Max = 110 mA 370 mA, 2110 - 2170 MHz DQ2 — 60 — MW6IC2420NBR1 Unit MHz % dB ° ns ° Unit W 3 ...
Page 4
... Z3, Z8 0.410″ x 0.054″ Microstrip Z4 0.138″ x 0.237″ Microstrip Z5 0.086″ x 0.237″ Microstrip Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values Part C1, C2, C3, C4 2.2 μF Chip Capacitors C5, C13 100 nF Chip Capacitors C6 ...
Page 5
... MW6IC2420 Rev. 0 C14 Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz RF Device Data Freescale Semiconductor V DS1 C1 C6 C15 C7 C13 DS2 C2 C11 C9 C10 C8 C4 C12 MW6IC2420NBR1 5 ...
Page 6
... I = 620 mA DQ 580 mA 21 540 2450 MHz 16 0 OUTPUT POWER (WATTS) CW out Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of Total I MW6IC2420NBR1 PAE 210 mA DQ1 370 mA DQ2 f = 2450 MHz OUTPUT POWER (WATTS) CW out 210 mA DQ1 ...
Page 7
... DQ2 out f Z source MHz W 2450 54.8 + j16.6 0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load f = 2450 MHz = load W Output Matching Network MW6IC2420NBR1 7 ...
Page 8
... MW6IC2420NBR1 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
Page 9
... RF Device Data Freescale Semiconductor MW6IC2420NBR1 9 ...
Page 10
... MW6IC2420NBR1 10 RF Device Data Freescale Semiconductor ...
Page 11
... Changed Storage Temperature Range in Max Ratings table from - 65 to +200 +150 for standardization across products • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232 Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MW6IC2420NBR1 11 ...
Page 12
... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW6IC2420NBR1 Document Number: MW6IC2420N Rev. 2, 2/2009 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...