MW5IC2030NBR1 Freescale Semiconductor, MW5IC2030NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW5IC2030NBR1
• Description: IC PWR AMP RF 26V 30W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW5IC2030NBR1

• Current - Supply: 160mA
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 23dB
• Package / Case: TO-272-16
• Rf Type: Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 27V
• Single Supply Voltage (max): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MW5IC2030NBR1 MW5IC2030GNBR1
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
CDMA Functional Tests (In Freescale 1900 MHz Test Fixture, 50 οhm system) V
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ± 885 kHz Offset. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
CDMA Application
(P
PHS Application
(P
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
= 5 W CW)
= 12.6 W CW)
Test Methodology
Characteristic
Test Conditions
Characteristic
Rating
(T
C
Stage 1, 27 Vdc, I
Stage 2, 27 Vdc, I
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
= 160 mA
= 230 mA
= 300 mA
= 1300 mA
Symbol
Rating
ACPR
G
IRL
η
G
3
ps
D
F
DD
= 27 Vdc, I
Symbol
Symbol
V
R
V
T
P
T
DSS
θJC
stg
GS
in
J
21.5
Min
Package Peak Temperature
18
—
—
—
DQ1
= 160 mA, I
1B (Minimum)
A (Minimum)
3 (Minimum)
260
Typ
- 18
- 49
0.2
23
20
- 65 to +175
Value
Class
- 0.5, +65
- 0.5, +15
Value
4.89
1.75
4.85
1.61
200
Freescale Semiconductor
20
DQ2
(1,2)
= 230 mA, P
Max
- 10
- 47
0.3
—
—
RF Device Data
out
(continued)
°C/W
dBm
Unit
Unit
Vdc
Vdc
Unit
Unit
dBc
°C
°C
=
dB
dB
dB
°C
%